| Allicdata Part #: | IXTP180N055T-ND |
| Manufacturer Part#: |
IXTP180N055T |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 55V 180A TO-220 |
| More Detail: | N-Channel 55V 180A (Tc) Through Hole TO-220AB |
| DataSheet: |  IXTP180N055T Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 55V |
| Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
| Rds On (Max) @ Id, Vgs: | -- |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| FET Feature: | -- |
| Power Dissipation (Max): | -- |
| Operating Temperature: | -- |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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The IXTP180N055T is a power MOSFET developed by IXYS Integrated Circuits. It is a low-voltage, low-on-resistance power MOSFET that is designed to operate over a wide range of temperature and can handle high voltage and high current.
This MOSFET is an n-channel device with a low RDS(on) of 55 milliohms. It has a maximum drain current of 180 Amps (IDl) and a maximum diverting aperture of 180 Volts (VDS). It is intended for use in power management applications such as DC-DC converters and motor drive systems.
The IXTP180N055T has a simple operating principle. It is controlled by applying a gate voltage (VGS) between the gate and the source. When this voltage is applied, it causes a shift in the FET\'s effective conduction channel from the drain to the source, leading to a linear current flow from the source to the drain.
The device has a maximum on-state voltage drop (VDSM) of 1.4 Volts and its maximum on-state resistance (RDS(on)) is 55 milliohms. In applications such as DC-DC converters, however, the voltage drop (VDS) will usually be higher than the maximum VDSM rating.
In addition, the IXTP180N055T is designed to be capable of high frequency switching. It has a maximum power dissipation rating of 325W and its switching time can be as low as 200nS. It also provides a useful range of variation in the time needed to switch on and off, allowing designers to fine-tune their designs to fit the application.
The IXTP180N055T MOSFET is suitable for use in a variety of applications, from motor drive systems to power management applications. Its low on-resistance, wide range of voltage ratings, and high frequency switching capabilities make it an ideal choice for these applications.
The specific data is subject to PDF, and the above content is for reference
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