IXTP460P2 Allicdata Electronics
Allicdata Part #:

IXTP460P2-ND

Manufacturer Part#:

IXTP460P2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 24A TO-220
More Detail: N-Channel 500V 24A (Tc) 480W (Tc) Through Hole TO-...
DataSheet: IXTP460P2 datasheetIXTP460P2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 480W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Series: PolarP2™
Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTP460P2 is a part of International Rectifier’s family of advanced Enhancement-Mode Power MOSFET (eFET) products. It is a generation 4 technology of trench gate field effect transistors (FETs). IXTP460P2 is an N-channel MOSFET that is used in power switching applications for power train and motor drive systems, such as motor control and lighting applications. It is designed to achieve maximum performance with a minimum footprint.

The total gate charge of the IXTP460P2 is 10nC, with a maximum operating voltage of 40 V and a maximum drain-source breakdown voltage of 500 V. The device has an RDS(ON) of 45 mΩ and a maximum continuous drain current of 5.5 A. It is available in a SO-5 package.

The working principle of the IXTP460P2 relies on controlling the drain-source voltage with the gate-source voltage. This is called Enhancement-Mode and it is the basis for the MOSFET. The source of the device is connected to the source voltage, the drain is connected to the load, and the gate is connected to the gate drive circuit. The gate-source voltage is then controlled to turn on/off the device.

The reason for using the IXTP460P2 in power switching applications is due to the device’s low on-state resistance and fast switching speed. This helps minimize power losses and minimize switching time in applications such as motor control and DC-to-DC converters. The device is designed to be switched on and off quickly, and it is also designed to handle high-current switching needs.

Because the IXTP460P2 is a generation 4 technology, it has some advantages over earlier generations. It has a low on-state resistance, fast switching speed, increased power and thermal efficiency, and improved gate resistance. This makes it an ideal choice for use in power electronics applications such as motor control, lighting, and DC-to-DC converters.

The IXTP460P2 is a very useful device and is used in a wide variety of applications. It is used in power electronics applications such as motor control and DC-to-DC converters, due to its ability to handle high current switching needs. It also has a low on-state resistance, fast switching speed, increased power and thermal efficiency, and improved gate resistance. Because of these properties, it is also used in lighting applications, such as LED lighting and incandescent lighting.

The IXTP460P2 is a part of International Rectifier’s family of advanced eFET products. It is a generation 4 technology of trench gate field effect transistors (FETs). It is an N-channel MOSFET that is used in power switching applications for power train and motor drive systems. It is designed to achieve maximum performance with a minimum footprint. It has a low on-state resistance, fast switching speed, increased power and thermal efficiency, and improved gate resistance. It is used in power electronics applications such as motor control, DC-to-DC converters, and lighting applications.

The specific data is subject to PDF, and the above content is for reference

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