| Allicdata Part #: | IXTP200N075T-ND |
| Manufacturer Part#: |
IXTP200N075T |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 75V 200A TO-220 |
| More Detail: | N-Channel 75V 200A (Tc) 430W (Tc) Through Hole TO-... |
| DataSheet: | IXTP200N075T Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 430W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
| Series: | TrenchMV™ |
| Rds On (Max) @ Id, Vgs: | 5 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 200A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IXTP200N075T is a high power MOSFET transistor, commonly known as a metal oxide semiconductor field effect transistor (MOSFET). It is a single gate device with 20V drain-source voltage, 11.7A maximum drain current, 20mΩ maximum R(DS) (ON) and 175W maximum power dissipation. This makes it suitable for applications that require both low to moderate power dissipation and high voltage.
The IXTP200N075T can be used in projects such as motor control and DC-DC converters. It can also be used for switching and amplification applications where voltage and current regulation are important. In motor control applications, the IXTP200N075T can be used to help regulate the speed and current of a motor, as well as providing efficient switching of power in a system. In DC-DC converters, it can be used to regulate the voltage and current supplied to the system.
The IXTP200N075T has an enhanced ruggedness that makes it suitable for high ambient temperature applications. The device also has an improved avalanche capability, making it suitable for high-side applications. The part also has a minimum operating temperature of -55°C, allowing it to be used in applications that require very low temperatures.
In terms of its working principle, the IXTP200N075T employs depletion mode Field Effect Transistors (FETs). These FETs have three terminals - the source, gate, and drain - and a body. A positive voltage applied to the gate forces the channel between the source and the drain open. This lets current flow from the source to the drain and the transistor turns ON. By applying a negative voltage to the gate, the transistor will turn OFF and current flow from the source to the drain will be cut off.
The IXTP200N075T has a maximum operating temperature of 150°C and is RoHS compliant. Due to its good thermal stability and low on-resistance, it is ideal for applications that require a robust transistor for efficient power delivery and switching. The IXTP200N075T is compatible with most industry standard packages, such as the DPAK, TO-220, and SOT-223 packages, making it suitable for a wide range of applications.
The IXTP200N075T is an ideal choice for applications that require a robust, high-power MOSFET transistor. Its enhanced ruggedness, low RDS (ON), and wide temperature range make it suitable for both low and high-power switching, regulation, and amplification applications. With its ability to operate in temperatures as low as -55°C, it is able to perform in tough environmental conditions. Furthermore, it is compatible with most industry standard packages, ensuring that it is a perfect fit for all types of systems. Thus, the IXTP200N075T is an excellent option for power delivery, regulation, and switching applications.
The specific data is subject to PDF, and the above content is for reference
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IXTP200N075T Datasheet/PDF