IXTP44N10T Allicdata Electronics
Allicdata Part #:

IXTP44N10T-ND

Manufacturer Part#:

IXTP44N10T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 100V 44A TO-220
More Detail: N-Channel 100V 44A (Tc) 130W (Tc) Through Hole TO-...
DataSheet: IXTP44N10T datasheetIXTP44N10T Datasheet/PDF
Quantity: 338
Stock 338Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 130W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1262pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: TrenchMV™
Rds On (Max) @ Id, Vgs: 30 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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An IXTP44N10T is an integrated field-effect transistor (FET) designed specifically for applications where high-speed switch control is a requirement. It is a single N-channel, 200V power MOSFET.

In electronic circuitry, an IXTP44N10T, like all integrated field-effect transistors, serves as a switch or amplifier in electron flow, depending on the particular application. In either case, its function is to manipulate the electrical charge or current flow between two electrical nodes.

An IXTP44N10T, specifically, is an N-channel MOSFET, which provides the highest level of switching performance of any transistor. It is especially effective when used as a switch in applications that require high-speed, high-efficiency power switching. Its integration as a single, low-power device means that it is an economical switch device for high-power switching, especially since it is usually lower in cost and smaller in size, compared to other options.

When the IXTP44N10T is operating in a switching application, it is used to control the flow of electrons according to the logic state of its gate input. In most cases, it will be operated as an open-drain, where the gate voltage is used to control the voltage at the drain. When the gate voltage is high, the drain voltage is also high and the FET is “on”. When the gate voltage is low, the drain voltage is low, and the FET is “off”.

The IXTP44N10T utilizes an N-channel field-effect process to operate, meaning that it controls the electrical field and affects the flow of the electrons. It is composed of two parts: the source and the drain. The source is the entrance point into the FET and the drain is the exit point. The third element, being the gate, is the controlling point, which is where the voltage is used to control the flow of electrons. The gate is a negative field, meaning that a negative voltage must be applied to the gate in order to open the switch and allow current to flow.

The IXTP44N10T is used in a variety of applications, including power supplies, AC and DC motor controls, and motor starters. It can be used in combination with other MOSFETs or as a single device to achieve higher efficiency and longer life. It is also used extensively in automotive applications for controlling the flow of fuel or electric current.

The performance of the IXTP44N10T is dependent on the voltage and current that it is exposed to, as well as its physical construction. Its high switching capability and its ability to handle large currents make it a popular choice for both low- and high-power applications.

For any application, careful consideration should be taken to make sure that the IXTP44N10T will meet the requirements of the application. Whether it is used as a switch, amplifier, or any other purpose, the IXTP44N10T provides the highest performance and reliability available in a MOSFET.

The specific data is subject to PDF, and the above content is for reference

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