| Allicdata Part #: | MRF8P20100HSR5-ND |
| Manufacturer Part#: |
MRF8P20100HSR5 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | FET RF 2CH 65V 2.03GHZ NI780H-4 |
| More Detail: | RF Mosfet LDMOS (Dual) 28V 400mA 2.03GHz 16dB 20W ... |
| DataSheet: |  MRF8P20100HSR5 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Discontinued at Digi-Key |
| Transistor Type: | LDMOS (Dual) |
| Frequency: | 2.03GHz |
| Gain: | 16dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 400mA |
| Power - Output: | 20W |
| Voltage - Rated: | 65V |
| Package / Case: | NI-780S-4 |
| Supplier Device Package: | NI-780S-4 |
| Base Part Number: | MRF8P20100 |
Description
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The MRF8P20100HSR5 is a advanced power field effect transistor (FET) specifically designed to operate in radio frequency (RF) applications. It is composed of a single silicon chip that is utilized when the frequency or power of the signal is too high or outside the normal range of passive components such as resistors and capacitors. By utilizing the MRF8P20100HSR5, the highly complex flow of electrons and current is contained to a single chip, allowing for a sizable decrease in the size, complexity, and cost of the RF system in which it is used.The MRF8P20100HSR5 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET), a type of FET which uses insulated-gate FET (IGFET) technology to manipulate the flow of current. It requires the application of voltage changes to the gate of the FET in order to control the flow of electrons in the substance from the source to the drain. This ability to control current flow using voltages makes MOSFETs an excellent option for digital devices, as well as for analog circuits in which a large amount of power must be rapidly switched between sources.The MRF8P20100HSR5 is specifically designed to be utilized in various wireless applications, such as those in the 900 MHz ISM band, the 2.4 GHz 802.11b/g WLAN, and the 5 GHz 802.11a WLAN. It is an 8-pin plastic package with a drain-source voltage rating of 28 V and a drain current rating of 18 A. It can withstand a total of 60W, with a total power gain of 37 dB. The device also has a high packing density, high operating temperature, and high efficiency, making it perfect for applications that require the manipulation of high power at varying frequencies, such as those in the wireless industry.The MRF8P20100HSR5 also has a number of unique features that make it ideal for such applications. For example, it is equipped with a RF foldback that can limit the drain current as the temperature rises, allowing for greater thermal stability. It also has an anti-saturation and low on-resistance that can increase the operating efficiency of the device by reducing the conduction losses. Additionally, the MRF8P20100HSR5 can be configured in a variety of ways to meet the application requirements, such as using pre-biased LED devices for high side gate drive.Ultimately, the MRF8P20100HSR5 is a highly versatile and powerful device that can be used in a range of radio frequency applications. Its ability to regulate the flow of electrons and current, combined with its numerous special features, make it an ideal choice for a variety of high power, high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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