Allicdata Part #: | MRF8S26060HSR3-ND |
Manufacturer Part#: |
MRF8S26060HSR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 2.69GHZ |
More Detail: | RF Mosfet LDMOS 28V 450mA 2.69GHz 16.3dB 15.5W NI-... |
DataSheet: | MRF8S26060HSR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.69GHz |
Gain: | 16.3dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 450mA |
Power - Output: | 15.5W |
Voltage - Rated: | 65V |
Package / Case: | NI-400S-240 |
Supplier Device Package: | NI-400S-240 |
Base Part Number: | MRF8S26060 |
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MRF8S26060HSR3 is a discrete FET transistor specifically designed for use in RF applications. It is a N-Channel MOSFET with a maximum drain current of 110 amps and a maximum drain-source breakdown voltage of 60 volts. It has an RDSon of 0.45 Ohms and a gate-source threshold voltage of 2.9 volts. It has an extremely low drain-source ON Resistance (RDSon) for high power handling and high frequency operation, making it ideal for use in high power, high frequency applications.
The main application of the MRF8S26060HSR3 FET transistor is in RF power amplifiers and RF switching and switching logic circuits. It can be used to amplify RF signals, to switch RF power, and even to perform logic operations. In RF power amplifiers, the FET transistor is used as an output stage to drive the RF signal. In RF switching, the FET transistor can be used to switch high speed low noise signals by using a complementary FET transistor. In logic applications, the FET transistor can be used to switch logic signals.
The basic working principle of the MRF8S26060HSR3 FET transistor is that it controls current flow between the source and drain by applying a voltage to the gate terminal. When the voltage applied to the gate terminal is below the threshold voltage, the FET transistor is said to be in its OFF state, and the current flow between the source and drain is blocked. However, when the gate voltage is above the threshold voltage, the FET transistor is said to be in its ON state, and the current flow between the source and drain is allowed. The amount of current flowing through the FET transistor can be controlled by adjusting the gate voltage.
The MRF8S26060HSR3 FET transistor is an excellent choice for RF applications due to its high power handling capability and low gate-source threshold voltage. It has also been specially designed for high power, high frequency applications, and its RDSon is extremely low compared to other FET transistors. This makes the MRF8S26060HSR3 ideal for RF power amplifiers, RF switching, and switching logic circuits.
The specific data is subject to PDF, and the above content is for reference
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