MRF8S21140HR3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MRF8S21140HR3 is a type of Field Effect Transistor (FET) comprised of a MOSFET called an RF MOSFET. This type of MOSFET is designed to operate at frequencies lies in the radio-frequency range, usually greater than 10MHz and may even extend up to the gigahertz range. MRF8S21140HR3 consists of a polycrystalline silicon layer between a gate electrode and the source and drain electrodes. When a voltage is applied to the gate electrode, the polycrystalline silicon determines the resistance between the source and drain. By adjusting the voltage applied to the gate, the resistance between the source and drain can be adjusted, allowing for the amplification and switching operations of the device.

MRF8S21140HR3 is most commonly used in radio-frequency mixer and amplifier applications. As a mixer, it is used to combine two sinusoidal signals of different frequencies and output the sum and the difference frequency signals. This type of MOSFET can also be used to amplify the signal or even act as a switch, turning the amplified signal on or off depending on the applied voltage. Additionally, the MOSFET can also be used in oscillator circuits to generate a signal.

MRF8S21140HR3 has many advantages compared to other FETs. One of the advantages is its enhancement-mode operation and ability to offer higher frequency performance compared to traditional devices. In addition, it has higher current and power ratings, due to which it is able to handle higher current and power levels. Moreover, MRF8S21140HR3 also has the ability to provide higher stability and linearity of operation. Due to the enhancement mode of operation and its inherent low conducting losses, it can also be used in switching applications, eliminating the need for separate biasing networks.

MRF8S21140HR3 also provides low noise and low distortion for radio frequency and switching applications. The MOSFET has a high output impedance and an excellent group delay flatness. This helps minimize the noise and distortion in high-frequency applications and also reduces errors in switching applications. It also has highly efficient performance with low supply induced noise while providing high speed operation.

MRF8S21140HR3 is typically used to amplify the signal or to act as a switch. When used as an amplifier, the gate voltage is typically kept constant and the source voltage is varied. The voltage applied to the source is then amplified, and the output is achieved by varying the gate voltage. When used as a switch, the gate voltage is typically varied, and the source voltage is kept constant. The output is then achieved by varying the gate voltage to switch the device on and off.

In summary, MRF8S21140HR3 is an RF-type FET and MOSFET designed to operate at frequencies lies in the radio-frequency range, usually greater than 10MHz and even may extend up to the gigahertz range. It is mainly used in mixer and amplifier applications and providing low noise and low distortion. The high output impedance and excellent group delay flatness further reduce errors in switching applications. Furthermore, it offers higher frequency performance, higher current and power ratings and higher stability and linearity of operation, compared to traditional devices.

The specific data is subject to PDF, and the above content is for reference