MRF8P20165WHR5

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MRF8P20165WHR5 Application Field and Working Principle

The MRF8P20165WHR5 is a high power gallium nitride (GaN) RF transistor from RFMW. This wide band, broadband device has been designed with reduced gate charge, enabling fast switching capabilities. It presents exceptional gain and efficiency performance in microwave amplifiers and can be used for a wide range of applications that include wireless infrastructure, telecommunications, and data transmission.

Applications

The MRF8P20165WHR5 is the ideal solution for commercial radio and microwave applications that demand high power and high gain with 110 W CW capability at 6.1 GHz and backoff. It is suitable for linear, switching, and pulsed mode operations. This device is a great option for base station applications in cellular, PCS, UMTS, LTE, WiMAX, and WLAN networks.

The MRF8P20165WHR5 is also an ideal solution for industrial, scientific, and medical (ISM) applications like pulsed radars and military communication systems. Its operation in Class AB mode delivers high-efficiency amplifier systems.

Working Principle

At the heart of the MRF8P20165WHR5 is a radio frequency GaN HEMT transistor process with high breakdown voltage and superior gain/efficiency. The 3-6 GHz power transistor is designed to support Class AB and Class D operation. This device features optimized gate charge for fast switching and low capacitance for high-speed operation.

The MRF8P20165WHR5 has a standard package of 4-pin flat pack, and offers a wide temperature range from -55°C to +105°C. The device features a typical gain of 15.4 dB at 6.1 GHz. It also features a drain efficiency of 70%, and a Vdss (drain-source voltage) of 50V.

In summary, the MRF8P20165WHR5 is a wide band, wide temperature range GaN HEMT RF transistor. Its wide gain/efficiency and fast switching capabilities make it ideal for high performance applications such as wireless infrastructure, telecommunications, and data transmission.

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