NTD4854N-1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTD4854N-1G is a single field-effect transistor (FET). FETs are three-terminal devices that use a voltage applied across the source and drain (terminals) to control the flow of current across the channel between them. The FET consists of a source (S), a drain (D), and a gate (G), and the principal application is switching. FETs can either be depleted-mode devices or enhancement-mode devices, of which the NTD4854N-1G is the latter. This article will discuss the application fields and working principles of the NTD4854N-1G.

Application Fields

The NTD4854N-1G is designed for a wide range of applications, including:

• Power conversion equipment
• Industrial power supply
• Electronic lamps, LEDs and opto-couplers
• DC/DC converters
• DC/AC inverters
• Electronic ballasts for fluorescent lamps
• Switched mode power supplies (SMPS)

The NTD4854N-1G is also suitable for voltage step-down and current stabilization applications, such as those used in computer motherboards and in battery chargers.

Working Principle

The NTD4854N-1G is a metal-oxide semiconductor field-effect transistor (MOSFET). It consists of a source, a drain and a gate, and its function is to control the flow of current between the source and the drain. The gate acts as a switch, allowing current to flow through the channel when it is switched on. The gate voltage determines the amount of current that is allowed to pass through the channel.

The NTD4854N-1G is a depletion-mode FET. This means that with no voltage applied to the gate, there will be a small leakage current flowing through the FET. This is because the threshold voltage is less than zero. When a voltage is applied to the gate, it causes the drain-source resistance to decrease, allowing more current to flow through the channel. The resistance is proportional to the gate voltage, so adjusting the gate voltage will change the amount of current flowing through the channel.

The NTD4854N-1G has a wide range of operating voltages, from 8V to 500V, and maximum operating temperatures of 125°C. It also has a low turn-on resistance and a low gate threshold voltage which makes it suitable for switching applications in which a low on-state resistance is needed.

Conclusion

The NTD4854N-1G is an enhancement-mode MOSFET which is suitable for a wide variety of applications, including power conversion, industrial power supplies, and DC/DC converters. It has a wide range of operating voltages and a low turn-on resistance and gate threshold voltage, making it ideal for switching applications in which a low on-state resistance is needed.

The specific data is subject to PDF, and the above content is for reference