NVMFS4C01NWFT3G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	49A (Ta), 319A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	0.9 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	139nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	10144pF @ 15V
FET Feature:	--
Power Dissipation (Max):	3.84W (Ta), 161W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Package / Case:	8-PowerTDFN

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NVMFS4C01NWFT3G by ON Semiconductor is a depletion-mode MOSFET, it is a discrete FET device primarily used in switching and load applications.

A MOSFET is composed of a channel of n-type or p-type semiconductor material. NVMFS4C01NWFT3G is an enhancement mode device, meaning that it requires a voltage applied to the gate in order to turn it on. This type of device is often used in low voltage, high current applications, as it can be more efficient than a BJT at switching low voltage signals.

NVMFS4C01NWFT3G is a single n-channel MOSFET, meaning it has a single channel which allows current to flow between the drain and source, when the gate is charged. The device offers a very low on-state resistance of 0.07Ohm, allowing it to easily switch large amounts of current with minimal voltage drop. The device also offers an off-state voltage rating of -100V, meaning it can easily support a wide range of applications.

The main advantage of the NVMFS4C01NWFT3G is that it can be used in a wide range of applications. It can be used in switching applications, such as driving relays, controlling motors and high-power LEDs. It can also be used for load applications, such as providing load current control in LED sequencing and LED dimming systems.

The device can be used in typical switching and load control applications. It is a small packages device with minimal board space requirement, making it ideal for applications

where board space is limited. The off-state voltage rating of -100V, makes it suitable for applications with large transient voltages, such as automotive and industrial applications.

In summary, NVMFS4C01NWFT3G is a depletion-mode n-channel MOSFET. The device has a very low on-state resistance that allows it to easily switch large amounts of current, while the flexible pin-out allows it to be used in a range of applications. The low voltage off-state voltage rating, makes it suitable for automotive and industrial applications.

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