NVMFS4C03NT1G Discrete Semiconductor Products

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The NVMFS4C03NT1G is a MOSFET, Single, advanced power MOSFET designed for high power switching applications. It is specifically designed for automotive applications where the stiffness of supply input voltage and fast switching speed are crucial. It is also useful in other applications that require switching power supply or constant power supply applications.

The NVMFS4C03NT1G is designed for compatibility with a number of different biasing types: full-bridge, half-bridge, push-pull and others. The device features high peak current ratings, low and fast gate charge, a short current-spike peak, and a high frequency switching application capability. It also has a low drive voltage, high temperature operation, and excellent temperature stability.

The working principle of the NVMFS4C03NT1G is based on a MOSFET structure which consists of four metallic gates, three N-type and one P-type, responsible for conducting current between source and drain. MOSFETs can be either enhancement or depletion mode. The NVMFS4C03NT1G is an enhancement mode MOSFET as it is normally turned off and requires a positive gate voltage to be turned on. The enhancement mode MOSFETs contain a lightly doped N-type substrate and heavily doped N-type source and drain regions. When there is no voltage applied to the gate, the transistor is turned off. When there is a positive voltage applied to the gate, electrons will flow from the substrate to the source and the device reaches saturation.

In operation, the NVMFS4C03NT1G will draw a small amount of quiescent current, depending on the gate voltage and drain voltage. When the gate voltage is increased to a certain level, the current increases exponentially and is limited only by the load. This current will then be interrupted by a fast rise in gate voltage at which time the current flow is stopped and the device is turned off. The normal rise time of the device is dependent on the gate voltage and will reach the full on state in under 20 nanoseconds. This makes the device extremely suitable for switching applications and power supplies.

The NVMFS4C03NT1G is commonly used in automotive, industrial, lighting, and power supply applications. It is typically used in circuits with high efficiency requirements, such as boost and flyback converters, Class D audio amplifiers, and lamp dimmers. It can also be used in battery chargers, solenoid circuits, and half-bridge and full-bridge circuits. Although the NVMFS4C03NT1G is a small package device, it is able to deliver a high current, electrolytic-capacitor-like performance, making it suitable for these types of applications.

The NVMFS4C03NT1G is an advanced power MOSFET designed for high power switching applications. It is specifically designed with advanced technology to ensure compatibility with a variety of biasing types, such as full-bridge, half-bridge, push-pull, and others. It features a low drive voltage, high temperature operation, fast switching speed, excellent temperature stability and high peak current ratings. The device is commonly used in automotive, industrial, lighting, and power supply applications and can be used in battery chargers, solenoid circuits, and half-bridge and full-bridge circuits.

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