NVMFS4C05NT1G Discrete Semiconductor Products

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NVMFS4C05NT1G is an enhanced performance NMOSFET that is part of the General Purpose family of transistors. It is designed to provide a low on-resistance and high-current capabilities. It is ideal for severe environments, including high voltage, high temperature, and high ESD applications.

The NVMFS4C05NT1G is a N-channel enhancement-mode MOSFET with a Maximum Drain-to-Source Voltage (Vds) of 40V, Continuous Drain Current (ID) of 4.8A, a Maximum Gate-Source Voltage (Vgs) of 20V, and a Maximum Drain-Source On-State Resistance (Ron) of 0.025Ohm.

The NVMFS4C05NT1G NMOSFET is widely used in power switching applications such as power converters, motor control, power supply and distribution, LED lighting, and DC motor drive designs. The low on-state resistance combined with the high-current capability allows for higher power efficiency and improved system performance in such applications.

In addition to its embedded circuitry and settings, the NVMFS4C05NT1G NMOSFET also features a range of protections. These include over-voltage protection and overtemperature protection. It also features an integrated fast-response circuit to reduce overcurrent.

The NVMFS4C05NT1G NMOSFET is designed with an optimal chipset to provide higher power efficiency, faster switching, and improved system performance. Its enhanced design also offers improved performance in high-temperature environments and provides improved ESD protection.

The working principle and functionality of any NMOSFET device, including that of the NVMFS4C05NT1G, is based on the three-terminal switching device model. First, the Gate terminal is used to control a channel between the Voltage Source and the Drain terminal, as well as to provide voltage amplification. The Gate, Source and Drain terminals of the NVMFS4C05NT1G are typically connected to a power supply, ground, and a load, respectively.

The voltage applied to the Gate terminal determines the conductive state of the NMOSFET device. When the voltage is zero, or no voltage at all, the device is in an off state with very high on-state resistance. However, when the voltage is greater than certain threshold voltage, the device starts to turn on and the on-state resistance is significantly reduced.

The NVMFS4C05NT1G NMOSFET is a versatile transistor that can be used in many applications. In addition to power switching applications, the device can be used in grid-connected applications, power semiconductor components, and other advanced power management schemes.

In conclusion, the NVMFS4C05NT1G is an enhanced performance NMOSFET, designed to provide low on-resistance and high-current capabilities in severe environments, thereby allowing for better power efficiency, faster switching, and improved system performance. It has the ability to operate in high temperatures and provides an integrated over-voltage protection and over-temperature protection. The NVMFS4C05NT1G can be used in a wide range of applications, including power switching applications as well as grid-connected applications, power semiconductor components, and power management schemes.

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