NVMFS4C05NWFT1G

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.61W (Ta), 79W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1972pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3.4 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	24.7A (Ta), 116A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

NVMFS4C05NWFT1G is a family of non-volatile memory Field Effect Transistors (FETs) that is designed to be used in a wide range of consumer electronic applications. As the name suggests, NVMFS4C05NWFT1G is a combination of a Floating Gate Field Effect Transistor (FET) and a securely stored, non-volatile memory (NVM). This unique combination provides the device with the dual benefits of high speed and low power, making it an excellent choice for a wide range of consumer and commercial applications.

Application Field and Working Principles

NVMFS4C05NWFT1G is primarily used in consumer electronics applications including digital cameras, video cameras, and portable audio players. The device is also used in automotive and defense applications, as well as industrial applications such as process control and motor control.The NVMFS4C05NWFT1G non-volatile memory FET has a variety of advantages over other types of non-volatile memories, including 40% lower power consumption than other NVM technologies, fast write/read speeds, and robust endurance and data retention capabilities.The device consists of a single-gate device with a Floating Gate (FG) that is securely stored and a control gate that controls the FG. When a small voltage (Vgs) is applied to the control gate, electrons (or holes, depending on the type of the device) from the source (S) or the drain (D) side pass through the channel formed by the FG and enter the FG of the device. This causes a change in the threshold voltage (Vth) of the device as a function of stored charge, which is referred to as the device’s “memory window”. By varying the Vth of the device, the device can store either a 0 or a 1 at its memory window.

Conclusion

NVMFS4C05NWFT1G is a family of non-volatile memory Field Effect Transistors (FETs) that offers a unique combination of speed, low power, and robust endurance and data retention capabilities. It is an excellent choice for a wide range of consumer and commercial applications, including digital cameras, video cameras, portable audio players, automotive applications, defense applications, and industrial applications such as process control and motor control. This device consists of a single-gate device with a Floating Gate that is securely stored and a control gate that controls the FG, and the device’s memory window is varied by varying the control gate voltage.

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