NVMFS4C310NT1G Discrete Semiconductor Products |
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Allicdata Part #: | NVMFS4C310NT1GOSTR-ND |
Manufacturer Part#: |
NVMFS4C310NT1G |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V TRENCH |
More Detail: | N-Channel 30V 17A (Ta), 51A (Tc) 3.5W (Ta), 32W (T... |
DataSheet: | NVMFS4C310NT1G Datasheet/PDF |
Quantity: | 3000 |
1500 +: | $ 0.16541 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 32W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18.6nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 51A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVMFS4C310NT1G is a type of single N-channel MOSFET transistor. It is a dual isolated source and drain transistor having a single gate terminal. The transistor is composed of two unique silicon channels which are isolated from each other by deep mesa regions of silicon. The NVMFS4C310NT1G has a high simplified structure and is used as an electronic switch in various electronic circuits. It is used to control the voltage, current and power in various devices such as amplifier stages and digital circuits.
Application Field
NVMFS4C310NT1G is used as an electronic switch in applications where a small transistor is necessary, such as in high-speed switching circuits, motor driver circuits, gate driver circuits, clock circuits, and switching power supplies. It is also used in high frequency oscillators, voltage converters, SMPS regulators and measurement circuits. The NVMFS4C310NT1G also has a low on-resistance which makes it ideal for high-efficiency and high-power applications.
Working Principle
The NVMFS4C310NT1G transistor works on the principle of controlling current flow from the source to the drain by varying the voltage applied to the gate. The transistor is a dual source and drain device, where the two drain terminals are isolated from each other, and the gate is used to vary the conductivity of the device. When a positive voltage is applied to the gate terminal, it allows the conduction of current from source to drain, thereby switching the device ON and when the gate voltage is brought back to zero, the transistor switches OFF.
When the voltage applied to the gate terminal is increased, there is a decrease in the resistance presented to the current flow from the source to the drain and vice versa. This decrease in the drain resistance allows more current to flow which is referred to as a ‘short channel conduction’. The NVMFS4C310NT1G transistor has a low on-resistance and can sustain higher current flow than other MOSFETs.
The transistor also has a low gate capacitance which helps to minimize power dissipation. The device is also designed to operate at high voltages and frequencies. It also has a low thermal resistance which helps it dissipate less heat and therefore be more reliable.
The NVMFS4C310NT1G transistor is a reliable, efficient and cost effective solution for various electronic applications. It is widely used in automotive, consumer and industrial applications. The device can be used in a variety of applications such as high voltage switching, DC-DC converters, solenoid actuators, low-power amplifiers, and low-noise amplifiers. It is also used in LED lighting, radio frequency, and microwave applications.
The specific data is subject to PDF, and the above content is for reference
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