NVMFS5826NLT1G Discrete Semiconductor Products

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NVMFS5826NLT1G is specially designed for low voltage, low power and high speed switching applications. This device is an enhancement mode vertical DMOS FET which uses N-channel technology and is housed in a TO-252 package. It offers unique capabilities such as low on-resistance, low capacitance, fast switching, small package size and a low voltage drop. Additionally, it also offers soft start, short circuit protection and over-current protection.

The device is mainly used in logic level conversion from low voltage to higher voltage when it will be used in power circuits. In power conditioning and high frequency switching applications, this device can be used for low level on-off switching, for current limiting and for the protection of power lines.

In medical imaging and diagnostic equipment such as X-ray machines and ultra sound imaging, this device can be used for peak detector circuit as well as for other low voltage applications such as sine wave oscillators, source and sink circuits for sensors, current source for DC-DC converters and for current limitation in clipping circuits.

The working principle of the NVMFS5826NLT1G lies in the fact that when it is forward biased, positive gate voltage increases the conductivity of the depletion region between the drain and the source and thus current starts flowing from the drain to the source. The on-state resistance of this device is relatively low as compared to other transistor devices as it is based on N-channel DMOS technology.

This device also has a gate-source protection diode which helps in protecting the gate against reverse voltages. Its low voltage drop is beneficial in applications where the forward voltage drop across the FET should be as low as possible. Moreover, it is also beneficial in low voltage and low power applications, as it reduces power loss.

NVMFS5826NLT1G is ideal for low voltage, low power switching applications. Due to its low on-state resistance, low capacitance and fast switching speeds, it can be effectively used in the power conditioning and switching applications, logic level conversion and sensor control applications. It also offers good protection against reverse voltage with the help of its gate-source protection diode and is able to withstand short circuit and over-current conditions thanks to its soft start and over-current protection features.

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