NVMFS5826NLWFT1G Discrete Semiconductor Products |
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Allicdata Part #: | NVMFS5826NLWFT1GOSTR-ND |
Manufacturer Part#: |
NVMFS5826NLWFT1G |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 26A SO8FL |
More Detail: | N-Channel 60V 8A (Ta) 3.6W (Ta), 39W (Tc) Surface ... |
DataSheet: | NVMFS5826NLWFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.31288 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 39W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The NVMFS5826NLWFT1G is a logic level single gate N-channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This device features a low threshold gate voltage that enables very low power consumption and low input capacitance meaning better switching performance, in addition to the low drain-source on-resistance that makes sure that these devices have efficient conduction abilities.
Application Field
The NVMFS5826NLWFT1G is designed primarily for power-switching circuits, but has a wide range of practical applications including:
- Switching and amplifier circuits
- CD/DVD players
- Cordless equipment
- Automotive circuits
- Battery chargers
- Digital circuits
- Backlight control circuits
Working Principle
MOSFETs use a conducting channel to control the current flow. The NVMFS5826NLWFT1G reduces current flowing through the channel when the gate voltage is low, and it increases the current when the gate voltage is high. This type of power switch is known as an enhancement-type MOSFET as they can increase the channel current above that of the drain current without the gate-source voltage going negative. An N-type MOSFET has its source and drain connected to a differing resistive material, and the N-type is more commonly used as the source is usually higher in potential than the drain.
This device is ideal for load switching and switching amplifiers due to its low gate-threshold voltage and input capacitance. This allows for low power application, such as new digital circuits, cordless devices, battery chargers, and automotive circuits, which require a low voltage level for digital signal transmission.
Conclusion
The NVMFS5826NLWFT1G is a single gate N-channel Enhancement Mode MOSFET that is ideal for load switching and switching amplifier applications due to its low gate-threshold voltage and input capacitance. Additionally, this device has a wide range of practical applications making it an ideal choice for high power switching, CD/DVD players, cordless equipment, automotive circuits, battery chargers, digital circuits, and backlight control circuits.
The specific data is subject to PDF, and the above content is for reference
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