NVMFS5826NLWFT3G Allicdata Electronics
Allicdata Part #:

NVMFS5826NLWFT3G-ND

Manufacturer Part#:

NVMFS5826NLWFT3G

Price: $ 0.30
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 26A SO8FL
More Detail: N-Channel 60V 8A (Ta) 3.6W (Ta), 39W (Tc) Surface ...
DataSheet: NVMFS5826NLWFT3G datasheetNVMFS5826NLWFT3G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.27741
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 24 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The NVMFS5826NLWFT3G is a single N-channel depletion mode Field Effect Transistor, featuring breakdown voltage up to 58V and maximum drain current of up to 26A. This transistor is designed for high voltage applications and offers high switching performance on very large signal loads. It is ideal for use in power supplies, high power applications, audio and video circuitry, and many more.

The NVMFS5826NLWFT3G utilizes the majority-carrier mechanism of conduction. It is a three-terminal device comprised of a source, a drain, and a gate. The source terminal is always connected to the negative supply, while the drain is connected to the load or output. When the gate is connected to the positive supply, current begins to flow between the source and the drain, turning on the transistor. When the gate voltage is decreased, current flow will decrease, and eventually turn off the transistor. This is how the NVMFS5826NLWFT3G device obtains its high-current switching capabilities.

The NVMFS5826NLWFT3G is especially useful for switching low-voltage digital signals, since it can also be operated at very low gate voltages. By using a small voltage on the gate, the drain current can be controlled easily and precisely, making it ideal for logic circuits. The NVMFS5826NLWFT3G can also be used for building inverters and for controlling the speed of dc motors. Furthermore, it can be used for load switching in audio and video circuits, as well as for driving high-current LED drivers and coils. In addition to its high current carrying capacity, the NVMFS5826NLWFT3G also offers low on-state resistance, which ensures minimal power losses.

In summary, the NVMFS5826NLWFT3G is an excellent choice for applications requiring high current switches. Its majority-carrier conduction mechanism, high breakdown voltage, and low on-state resistance make it suitable for a wide range of applications. It can be used for digital signal switching, motor control, audio/video circuitry, high-current LED drivers and coils, and more.

The specific data is subject to PDF, and the above content is for reference

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