NVMFS5832NLWFT1G

Vgs(th) (Max) @ Id:	2.4V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.7W (Ta), 127W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2700pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	51nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	4.2 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	21A (Ta)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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The NVMFS5832NLWFT1G is an advanced field effect transistor (FET) from Nexperia, a semiconductor company. It is a single, or dual, fuctional FET, which is able to operate in either an N-channel or P-channel physical configuration. This type of transistor is commonly used for low-voltage and low-power applications and features a wide range of operating conditions.The NVMFS5832NLWFT1G is commonly used for applications such as voltage-controlled switches and logic level interfacing in low-power/low-voltage, high-density applications, such as battery-powered portable electronics and handheld devices. It is also used as a replacement for old MOS technologies in existing designs.The device has a maximum guaranteed breakdown voltage of 68V and can be applied in a wide range of applications. The device has an on-state drain current of 1.6A and an on-state resistance of 4.5 ohms. It has a maximum power dissipation of 275mW and its typical gate-source capacitance is 5.5pF.The NVMFS5832NLWFT1G works by allowing the user to pass one form of electric current (current-flow) current through its gate structure, which then controls the direction of current flow through the other ends of the device. This type of transistor is normally on type since it needs just a small amount of current to turn it on, and then it acts as a switch-like device.The basic operating principle of the NVMFS5832NLWFT1G is based on the desired voltage or current. By applying a voltage to the gate-source terminals, a current will flow from the drain to the source terminal. The amount of this current is controllable and adjustable by changing the voltage applied to the gate-source terminals.The device is RoHS compliant and is compatible with all types of standard assembly and packaging processes. It has a low operating temperature range of -55° to 125°C, with an operating temperature range of -55° to 150°C for samples taken for production.The applications for the NVMFS5832NLWFT1G device extend beyond traditional switching. Its small size and shallow depth allows for integration into miniaturized systems, such as industrial control, medical, automotive and aerospace applications. Its characteristics also make it suitable for use in high-temperature environments where conventional power MOSFETs are not suitable due to their high power dissipation and large package size.The NVMFS5832NLWFT1G is well suited for applications such as power switching in battery-powered devices, DC/DC converters and low-voltage/low-power logic level interfacing. Its wide operating temperature range and ESD protection ensure robustness and reliability even in the harshest operating environments.The NVMFS5832NLWFT1G device offers an efficient and low-noise approach to low-density, low-voltage and low-power systems. It is ideal for applications such as switch-mode power supplies, motor control, medical device designs and portable electronic devices. The device’s small size, low power consumption, and advanced on-state performance makes it well suited for a wide range of applications where reliability and energy efficiency are essential.

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