NVMFS5833NT3G

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NVMFS5833NT3G is a device belonging to the transistors - FETs, MOSFETs - Single category of components. This MOSFET is specifically designed for power switching applications, such as motor and lighting control, and as a replacement for mechanical relays and contactors in these applications.

The NVMFS5833NT3G is a silicon N-channel enhancement mode MOSFET, configured in a three-terminal package with a standard lead spacing of 5.5mm. The device has a current-controlled input and voltage-controlled output, and is designed for use in a wide range of switching and amplifier applications. The device is suitable for operation at frequencies up to 1MHz, and can withstand a maximum junction temperature of 150°C.

The NVMFS5833NT3G has three main application areas. Firstly, it is used as a power switch in a wide range of motor, lighting, and other industrial control applications, where high switching performance, high reliability, and low component count are needed. Secondly, it is used as a high-power amplifier or drvier in DC motor and PWM motor applications, where high power and low on-resistance are required. Finally, it is used as a low-impedance digital switch in logic level and high speed digital circuits, where low input and output capacitances and fast switching times are important.

The working principle behind the NVMFS5833NT3G is based on the transistor-like behavior of the MOSFET. When a positive voltage is applied to the gate terminal, the positive charge will attract holes from the channel region, resulting in an increase in the channel resistance. This increases the gate-source voltage, which in turn forces more holes into the channel, resulting in a further increase in the channel resistance. The increased channel resistance reduces the drain-source current, which allows the device to be used as a switch. The higher the gate-source voltage, the higher the channel resistance, resulting in a greater reduction of the drain-source current.The maximum channel resistance of the NVMFS5833NT3G is 28.7Ω, and the minimum on-resistance is 8Ω. The maximum drain-source voltage is 20V, and the maximum drain current is 4A. The gate-source voltage maximum is 20V, and the maximum gate charge is 2.6nC. The maximum junction temperature is 150°C.The NVMFS5833NT3G is a versatile and reliable power switching device, suitable for applications from DC to 1MHz. Its low on-resistance, fast switching times, and high electrical reliability make it an ideal solution for switching and amplifier applications in motors, lighting, and digital circuits.

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