NVMFS5834NLWFT1G Discrete Semiconductor Products

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The NVMFS5834NLWFT1G transistor is a low-voltage MOSFET that belongs to the family of single junction transistors known as FETs. FETs come in two basic types, insulated and uninsulated, but the NVMFS5834NLWFT1G is an insulated device. It uses a metal oxide semiconductor (MOS) gate to control current flow, and so is considered to be a MOSFET.

The NVMFS5834NLWFT1G has a maximum drain-source voltage of 30 volts with a drive voltage of 2.5 volts and a low RDS(on) of 0.009 ohms. It also features an excellent breakdown voltage of 50 volts and a very good gate capacitance of 1.5 pF. Its maximum gate-source voltage is 8 volts, and its low gate-source resistance is 0.7 ohms. This device is suitable for use in applications such as DC-DC converters and low-voltage analog and digital circuits.

The device is also characterized by a strong on-state current handling capability, with a maximum drain current of 140mA and a continuous drain current of 90mA. Its maximum power dissipation is 300 mW at a channel temperature of 25 degrees Celsius. It also has an ETM maximum rating of 200 mW at a channel temperature of 25 degrees Celsius.

The NVMFS5834NLWFT1G works by acting as a switch between a gate and the channel. When a positive gate-source voltage is applied, current flows from the source to the drain, allowing the current to be switched on and off. This is known as the depletion mode of operation. The transistor also has an enhancement mode in which current is switched on when there is no gate-source voltage. This mode of operation is suitable for applications such as DC-DC converters.

The device also features a high junction temperature rating of 175 degrees Celsius, which allows the device to be used in higher temperature environments. It also features a higher current carrying capability than many other types of FETs.

The NVMFS5834NLWFT1G is an excellent choice for a wide range of applications. Its high voltage rating, low RDS(on), and low gate-source voltage make it suitable for use in DC-DC converters, power switching circuits, analog and digital circuits, and other applications where a combination of low resistance, high current, and high voltage are desired. Its excellent high temperature ratings make it suitable for high temperature applications such as automotive, industrial, and aerospace.

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