NVMFS5844NLWFT1G Allicdata Electronics

NVMFS5844NLWFT1G Discrete Semiconductor Products

Allicdata Part #:

NVMFS5844NLWFT1GOSTR-ND

Manufacturer Part#:

NVMFS5844NLWFT1G

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 61A SO8FL
More Detail: N-Channel 60V 11.2A (Ta) 3.7W (Ta), 107W (Tc) Surf...
DataSheet: NVMFS5844NLWFT1G datasheetNVMFS5844NLWFT1G Datasheet/PDF
Quantity: 1000
1500 +: $ 0.33396
Stock 1000Can Ship Immediately
$ 0.36
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 107W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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NVMFS5844NLWFT1G is a continuous device in the category of transistors, Field effect transistors (FETs), and MOSFETs, more particularly single FETs. It has a impressive list of attributes and is commonly used for a wide range of electronics applications.

The NVMFS5844NLWFT1G is a symmetrical N-channel enhancement type MOSFET. It is a member of the N-channel MOSFET family and is designed with a built-in low ON-resistance. This factor makes it suitable for many energy-saving applications such as switching mode power supplies, motor drives, and UPS systems.

The transistor features an environment-friendly N-channel enhancement mode MOS structure. This provides a low ON-resistance that leads to minimal power dissipation and enhanced reliability. It is available in the 3-pin SOT-7 template. The device is temperature-stable and features protection against voltage surges when the gate is open.

In addition to the NVMFS5844NLWFT1G\'s impressive selection of properties and features, the device also has a user-friendly design. Its body is composed of four 9SOT-7 packages and is easy to attach onto surfaces. The device holds an operating temperature range between -30 to 85 degrees Celsius, and the junction temperature range is between -50 to 150 degrees Celsius.

The NVMFS5844NLWFT1G was designed with a number of working principles in mind. The device works in an enhancement mode. This way, it can produce up to 60 mA of trans-conductance, with a drain-to-source voltage of less than 50V. Additionally, its output current is limited to 400 mA, and any voltage or current exceeding this value will damage the device.

The NVMFS5844NLWFT1G is unique in that it has a built-in stable operation region. This region is capable of producing up to 200 mA of continuous output current. The voltage range can operate up to a certain point, which is strongly dependent on the load requiring operation. Additionally, its flat frequency characteristics means that the device is a great choice for high switching frequency applications.

The NVMFS5844NLWFT1G has a wide range of application fields. Not only is it suitable for general switching applications, but it can also be used in forward and reverse power converters, power factor correction, inverters, choppers, and more. It is widely used for industrial, automotive, and medical applications, and its low power consumption makes it an excellent choice for energy efficient designs.

Overall, the NVMFS5844NLWFT1G offers a comprehensive list of impressive properties for a variety of application fields. With its built-in low ON-resistance, stable operation region, and environment-friendly design, the NVMFS5844NLWFT1G is an excellent choice for those looking for an N-channel enhancement type MOSFET.

The specific data is subject to PDF, and the above content is for reference

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