NVMFS5885NLWFT1G

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.7W (Ta), 54W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1340pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	21nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	15 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	10.2A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NVMFS5885NLWFT1G Application Field and Working PrincipleThe NVMFS5885NLWFT1G is a single high-voltage laterally diffused (LDMOS) field-effect transistor (FET). It is designed for use in high-voltage switching applications, such as power supplies, motor control, and automotive applications. This device offers reliable, high-voltage operation with low gate drive requirements and high-performance switching characteristics. This document provides an overview of the device’s application field and its working principle.Application Field of the NVMFS5885NLWFT1GThe NVMFS5885NLWFT1G is a high-voltage laterally diffused MOSFET (LDMOSFET) that is suitable for a variety of high-voltage switching applications. It is an ideal device for design engineers looking for high-voltage, high-performance MOSFETs. Specifically, it is suitable for applications such as: Power supplies, motor control, automotive, high-voltage lighting and lighting applications, microwave and radio frequency (RF) power amplifiers, and high-voltage valve drivers. The NVMFS5885NLWFT1G is particularly well-suited for use as a power switch in converters, inverters, and choppers.Working Principle of the NVMFS5885NLWFT1GThe NVMFS5885NLWFT1G is a high-voltage LDMOSFET that uses lateral diffusion of the source and drain contacts to reduce the gate drive requirements while still offering high-voltage operation. In a typical circuit configuration, a voltage is applied to the gate terminal of the device. This voltage causes the MOSFET to conduct when the applied voltage exceeds the thresholds set by the device’s body diode breakdown voltage and gate-source threshold voltage. When the applied voltage is removed, the device turns off and remains off until the voltage is reapplied. The NVMFS5885NLWFT1G is designed to provide excellent switching performance in high-voltage applications. It is able to withstand high surge voltages and has a high dielectric strength. This enables it to be used in high-voltage applications such as power supplies and motor control. Additionally, the device has low switching losses, which makes it a great choice for use in power supplies and motor control applications.In summary, the NVMFS5885NLWFT1G is a single high-voltage laterally diffused (LDMOS) field-effect transistor (FET) and is suitable for a variety of high-voltage switching applications. It has low gate drive requirements and offers high-voltage and high-performance switching characteristics. It is an ideal device for design engineers looking for high-voltage, high-performance MOSFETs and is particularly well-suited for use as a power switch in converters, inverters,and choppers.

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