NVMFS5C404NAFT3G Allicdata Electronics
Allicdata Part #:

NVMFS5C404NAFT3G-ND

Manufacturer Part#:

NVMFS5C404NAFT3G

Price: $ 1.13
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 53A 378A 5DFN
More Detail: N-Channel 40V 53A (Ta), 378A (Tc) 3.9W (Ta), 200W ...
DataSheet: NVMFS5C404NAFT3G datasheetNVMFS5C404NAFT3G Datasheet/PDF
Quantity: 1000
5000 +: $ 1.01434
Stock 1000Can Ship Immediately
$ 1.13
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
FET Feature: --
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
Description

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When discussing electrical system components such as transistors, one of the most important terms to be familiar with is field-effect transistors (FETs). FETs are a type of transistor that is used to switch power to a load, using the field effect instead of the base current. The NVMFS5C404Naft3G is a type of FET that is often used in applications where high performance is desired.

The NVMFS5C404Naft3G is a field-effect transistor that is often referred to as an enhancement-mode FET. It\'s a single-gate FET and it uses an insulated gate to control the current flow. The FET has a very low gate-to-source capacitance and a low drain-to-source capacitance. It also has a very low static drain-to-source off resistance, which is why it\'s well suited for high-performance applications.

The working principle of the NVMFS5C404Naft3G can be explained in two parts. The first part involves the gate-to-source capacitance. When a voltage is applied to the gate of the FET, a current flows between the gate and the source. This current charges a capacitance that exists between the gate and the source. The capacitance dictates the amount of current that can flow through the FET and also affects the on-resistance of the FET.

The second part of the working principle involves the drain-to-source capacitance. When a voltage is applied to the drain of the FET, a current flows between the drain and the source. This current is stronger than the current flowing from the gate to the source and it charges a different type of capacitance. This capacitance affects the off-resistance of the FET.

The NVMFS5C404Naft3G is a field-effect transistor that is commonly used in a variety of applications. It can be used for switching signals in applications such as power supplies, DC-DC converters, power amplifiers, inverters, regulators, filters and more. It can also be used as a protection device, as it has an extremely low static drain-to-source off resistance. This makes it extremely effective at protecting sensitive components from high voltage transients.

The NVMFS5C404Naft3G is an important component in any electronic system, as it is capable of performing a wide range of tasks. It can be used to switch signals and protect sensitive components, while also allowing for a more efficient operation. It\'s important to understand the working principle of the NVMFS5C404Naft3G and be familiar with its gate-to-source and drain-to-source capacitances in order to ensure that you get the most out of the device.

The specific data is subject to PDF, and the above content is for reference

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