Allicdata Part #: | NVMFS5C423NLAFT1G-ND |
Manufacturer Part#: |
NVMFS5C423NLAFT1G |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 31A 150A 5DFN |
More Detail: | N-Channel 40V 31A (Ta), 150A (Tc) 3.7W (Ta), 83W (... |
DataSheet: | NVMFS5C423NLAFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.34809 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Ta), 150A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVMFS5C423NLAFT1G is a single MOSFET transistor, which is categorized under transistors FETs, MOSFETs – Single. Applications of this transistor include being widely used as switches and also for amplifying signals. It is widely used for switching circuits and also for controlling the movement of small motors. This project also includes the understanding of its working principle.
NVMFS5C423NLAFT1G consists of a semiconductor gate, drain, and source. The gate in this transistor is the controlling voltage part of the circuit, while the drain and source are the output and input parts, respectively. The gate and drain are usually controlled by applying a voltage across the gate and drain, while the source is usually connected to ground. When a voltage is applied to the gate, it creates a current between the drain and source. This current acts as a switch, allowing or blocking the flow of current. When the voltage is increased further, the switch is activated and a large current flows between the drain and source.
The working principle of the NVMFS5C423NLAFT1G transistor involves the gate voltage creating a field around the metal gate of the transistor. This field induces charges in the substrate, which then causes each side to form an isolated region having an electric field. This electric field exerts a force on the electrons in the network, which causes them to move. This movement of electrons then creates an electric current between the drain and source, which is a switch in the circuit.
The NVMFS5C423NLAFT1G transistor can be used in a number of applications. It can be used as a switch in a variety of circuits, including digital circuits, switching between two power supplies, and driving solenoids, relays and small motors. It can also be used as a voltage amplifier, allowing the voltage to be increased or decreased. Finally, the NVMFS5C423NLAFT1G transistor can be used in power electronics as a converter.
In conclusion, the NVMFS5C423NLAFT1G transistor is versatile and can be used for a variety of applications. It consists of a semiconductor gate, drain, and source and works on the principle of the gate voltage inducing charges in the substrate and then creating an electric field. The NVMFS5C423NLAFT1G transistor can be used for a range of applications such as switches, voltage amplifiers, and converters.
The specific data is subject to PDF, and the above content is for reference
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