NVMFS5C423NLAFT3G

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.7W (Ta), 83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3100pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	2 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	31A (Ta), 150A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to NVMFS5C423NLAFT3G

The NVMFS5C423NLAFT3G is a type of single-gate Field Effect Transistor (FET). In particular, it is an enhancement-mode two-terminal negative-channel Metal Oxide Semiconductor FET (MOSFET).

Background

The FET is a type of transistor, that is, a physical component that can control the flow of electricity through a process known as current amplification. FETs are the bedrock component which is used to build operational amplifiers, commonly known as op-amps, which perform mathematical operations and create an output voltage or current that is proportional to the input.MOSFETs are a type of FET characterized by the use of metal or silicon gates as opposed to gates made with diodes or transistors. These metal gates allow for improved electron movement and therefore faster performance.

Application Field and Working Principle of the NVMFS5C423NLAFT3G

The NVMFS5C423NLAFT3G is an enhancement-mode MOSFET which is used in a wide variety of applications. This type of MOSFET is particularly well-suited for digital switching and analog switching applications, such as in power management devices and motor drivers.The NVMFS5C423NLAFT3G has a typical on resistance of 10 Ohms. This resistance is low enough to allow the device to be used in high-power digital switching applications.The NVMFS5C423NLAFT3G is an enhancement-mode two-terminal negative-channel MOSFET. This type of MOSFET is typically used in digital circuits. The device is operated by a current flow through the gate of the device. This current flow causes the device to turn on (enhancement) or turn off (depletion). The device has a low input capacitance and can be operated up to a maximum supply voltage of 20 Volts.The NVMFS5C423NLAFT3G is a single-gate FET with a maximum channel width of 8 μm. This enables the device to operate at higher frequencies, allowing it to be used in applications such as power amplifiers, where high speed signals are required.The typical on resistance of the NVMFS5C423NLAFT3G is 10 Ohms, however this can be increased to as much as 14 Ohms. This resistance is low enough to allow the device to be used in high-power digital switching applications such as power management and motor control.The device has a typical maximum drain-source breakdown voltage of 20 Volts, which allows it to be used in applications that require a higher voltage range. It also has a typical drain-source on resistance of 10 Ohms, allowing it to be operated at higher current levels.

Conclusion

The NVMFS5C423NLAFT3G is an enhancement-mode two-terminal negative channel MOSFET. This type of transistor is widely used in digital switching, power management and motor control applications. It has a low input capacitance and can be operated up to a maximum supply voltage of 20 Volts. The NVMFS5C423NLAFT3G is an ideal choice for applications that require high-power digital switching and analog switching.

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