Allicdata Part #: | NVMFS5C426NT1G-ND |
Manufacturer Part#: |
NVMFS5C426NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V SO8FL |
More Detail: | N-Channel 40V 3.8W (Ta), 128W (Tc) Surface Mount ... |
DataSheet: | NVMFS5C426NT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 128W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.3 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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Introduction
NVMFS5C426NT1G is a metal oxide semiconductor field effect transistor (MOSFET) developed by Toshiba. It is a self-restoring, n-channel logic level FET designed to minimize power consumption in a wide range of electronic applications. The FET is optimized to reduce power consumption when connected to voltage sources and can be used in power management applications
Application field
NVMFS5C426NT1G is suitable for a wide range of electronic applications. It has a very low on-state power loss thanks to its self-restoring circuitry and over-current protection. This makes it suitable for various power management applications such as switching circuits and switch-mode power supplies. This FET can also be used in many logic level gate circuits in digital electronics and in display driver circuits.
Working principle
The principle of operation of NVMFS5C426NT1G is based on two essential features – a p-channel enhancement-mode MOSFET and a self-restoring circuit. The self-restoring circuit prevents current rise in both on-state and off-state, by active current-varying. During the on-state, the MOSFET is turn-on by a voltage or current source. The self-restoring circuit will then reduce current during the on-state, while in the off-state, it will help increase the drain-source resistance to a high level.
In addition, the FET is designed with a built in over-current protection circuit that helps protect the FET from short circuits and other potentially damaging conditions. It will shut down the FET if the drain current exceeds a certain level for a predetermined period of time. The FET can then be quickly and successfully recovered when the fault condition is removed.
Conclusion
NVMFS5C426NT1G is an ideal choice for a wide range of electronic applications. Its low on-state power loss, self-restoring circuitry, and over-current protection greatly reduce the risk of power loss and ensure reliability in application. Its various features enable the FET to be used for various power management applications as well as digital electronics and display driver circuits.
The specific data is subject to PDF, and the above content is for reference
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