NVMFS5C426NT3G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NVMFS5C426NT3G is a single-field-effect transistor (FET) that is manufactured by ON Semiconductor. It is commonly used in motor control and audio amplifiers. To use this FET, a source of dc power must be supplied to the gate of the FET, which then switches on the current flow from the drain to the source.

The NVMFS5C426NT3G is a MOSFET. A MOSFET is a type of field-effect transistor that utilizes an insulated gate. When the voltage at the gate reaches a threshold voltage, which is typically between 0.8 V and 2 V, the transistor turns on and a current will flow through the drain and the source.

This type of FET requires a minimum gate-source voltage (V_GS) of 8V. It\'s drain current is rated at 1.25A, while its drain-to-source breakdown voltage is rated at 55V. This MOSFET has a high maximum power dissipation of 15W, and a gate charge of 1.9nC.

The NVMFS5C426NT3G offers a variety of features that make it an ideal choice for many applications. Its low gate charge makes it easy to switch the current on and off rapidly, which is beneficial for applications such as motor control, where quick switching is desirable. Its high power dissipation also makes it suitable for high power audio amplifiers or other high power devices. The MOSFET\'s high breakdown voltage also provides additional device protection and stability.

The NVMFS5C426NT3G is a reliable FET, and it is useful in a variety of applications. Its low gate charge and high power dissipation make it suitable for high power and fast switching applications. Its high breakdown voltage provides additional protection, making it a safe and reliable device for a variety of applications.

The specific data is subject to PDF, and the above content is for reference