Allicdata Part #: | NVMFS5C430NLT1G-ND |
Manufacturer Part#: |
NVMFS5C430NLT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 200A SO8FL |
More Detail: | N-Channel 40V 3.8W (Ta), 110W (Tc) Surface Mount ... |
DataSheet: | NVMFS5C430NLT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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NVMFS5C430NLT1G is one of the most popular FETs (Field Effect Transistors) and is widely used across a variety of different applications. It is a single MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) that features an N-channel enhancement type. In electronic design, it is typically used for switches and amplifiers, providing high efficiency and fast switching speed. The NVMFS5C430NLT1G is also able to handle up to 30 volts of power.
NVMFS5C430NLT1G is available in two package types; SO-8 and DPAK-3. The SO-8 package is a surface-mount device with a bottom-gate structure and a single N-channel MOSFET on the bottom of the package. The DPAK-3 is a dual-in-line package and has two N-channel MOSFETs on the bottom of the package, each with its own drain and source terminal.
NVMFS5C430NLT1G applications include switching, motors, amplifiers, and general-purpose power supply applications. It is also widely used for high-voltage switching applications in a variety of industrial and consumer devices such as TVs, computers, and other electronic appliances. In the automotive sector, it is widely used for electronic circuits in automobiles, such as engine control modules, fuel injectors, solenoids, transmissions, brakes, etc.
The working principle of NVMFS5C430NLT1G is based on the concept of mobile charges. The transistor is made up of an N-type semiconductor layer, which is etched to form a source electrode, drain electrode and a gate electrode. The gate electrode is connected to a voltage source, and it controls the flow of electrons from the source to the drain. When a positive voltage is applied to the gate, electrons flow from the source to the drain. This results in a flow of current from the drain to the source. By controlling the voltage and current, the NVMFS5C430NLT1G can be used to control the operation of other electronic components.
NVMFS5C430NLT1G is the perfect transistor for low-power and high-speed applications. It is reliable and cost-effective, and is suitable for a wide range of applications. It is a safe and reliable option for circuit protection and switching applications. Whether you are designing an automotive, industrial, or consumer electronics device, NVMFS5C430NLT1G is the right choice.
The specific data is subject to PDF, and the above content is for reference
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