NVMFS5C430NLWFT1G Allicdata Electronics
Allicdata Part #:

NVMFS5C430NLWFT1G-ND

Manufacturer Part#:

NVMFS5C430NLWFT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 200A SO8FL
More Detail: N-Channel 40V 3.8W (Ta), 110W (Tc) Surface Mount ...
DataSheet: NVMFS5C430NLWFT1G datasheetNVMFS5C430NLWFT1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The NVMFS5C430NLWFT1G is a single N-type metal–oxide–semiconductor field-effect transistor (MOSFET). It is a three-terminal device which has a source, a gate and a drain. The low voltage and low current drain drain to source make it useful for a wide range of applications including power switching and audio amplification.

MOSFETs are usually built as either N-channel (N-type) or P-channel (P-type). NVMFS5C430NLWFT1G is an N-channel MOSFET which has a layered structure. The two terminal gates, the drain and the source are the top most layer on the structure. The substrate below the structure is an insulating material which is sandwiched between two conducting materials, hence being called the ‘insulator dielectric’.

A MOSFET can work as either a voltage regulator or a voltage switch. It works as a voltage switch when the voltage applied to the gate is either above or below the necessary threshold voltage. When the voltage applied to the gate is above the threshold voltage, the MOSFET is said to be ‘on’ and it allows current to flow from the drain to the source. Conversely, when the gate voltage is below the threshold voltage, the MOSFET is said to be ‘off’ and it does not allow current to flow.

The NVMFS5C430NLWFT1G has a threshold voltage of 2.3V which makes it suitable for use as a voltage switch. Furthermore, the on-state current is 13mA which makes it efficient for power switching and audio amplification. In particular, the combination of low voltage, low current and on-state current make it suitable for use in consumer electronics such as televisions, radios and amplifiers.

NVMFS5C430NLWFT1G is also suitable for automotive applications such as power switching and power control. The low voltage capability makes it suitable for use in engine management systems and fuel injection systems. Moreover, the low current drain makes it suitable for use as a switch to control signals from sensors in the engine.

The NVMFS5C430NLWFT1G makes an excellent choice for a variety of different applications, such as consumer electronics, automotive, and even industrial. Its low voltage, low current drain, on-state current and layering structure make it particularly well-suited for use in power switching and audio amplification. As such, the NVMFS5C430NLWFT1G is the ideal choice for anyone looking for a dependable three-terminal MOSFET.

The specific data is subject to PDF, and the above content is for reference

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