NVMFS5C442NLAFT3G

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.7W (Ta), 83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3100pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	2.5 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	29A (Ta), 130A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NVMFS5C442NLAFT3G Application Field and Working PrincipleThe NVMFS5C442NLAFT3G is an integrated circuit that is used predominantly in the control and protection systems of various electrical or electro-mechanical systems (EMSs). This Integrated Circuit (IC) is a single, zero-drain voltage MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) that features integrated feedback circuitry to enhance system robustness, as well as built-in ESD (electrostatic discharge) protection to ensure reliable operation.Application FieldThe NVMFS5C442NLAFT3G Integrated Circuit is designed to control and protect a wide range of electrical and electro-mechanical systems (EMSs). In many applications, the IC is responsible for ensuring system stability through the level-shifting of its output either up or down, as per the specific application requirements. As a MOSFET, the IC can also be used to switch higher power levels in larger scale electrical systems and equipment, providing a cost-effective and efficient solution over conventional switching components.In particular, the NVMFS5C442NLAFT3G is well-suited for applications in the automotive and industrial automation sector. It is also commonly used in a variety of consumer products, as well as medical devices.Working PrincipleWhen powered on, the NVMFS5C442NLAFT3G Integrated Circuit operates by drawing its assumed input voltage on the Gate pin and comparing it to a second, independent reference voltage. The reference voltage is set during production and is independent of the Gate voltage. Based on the comparison between the two voltages, the IC is able to make a decision on whether the Gate pin should be set high or low, thereby controlling the output of the IC. The Zero-Drain voltage MOSFET also has an integrated feedback loop to ensure system stability by preventing oscillations at the output, as well as an ESD protection circuit to help protect systems from high voltage shocking.In short, the NVMFS5C442NLAFT3G Integrated Circuit is a single-channel MOSFET that is designed to provide a cost-effective and efficient solution for the control and protection of various electrical or electro-mechanical systems. The IC provides a level-shifting output, feedback-based stability, and integrated ESD protection, enabling it to serve diverse applications across the automotive, industrial, medical and consumer markets.

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