NVMFS5C442NLWFAFT3G

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NVMFS5C442NLWFAFT3G is an advanced, high-performance transistor designed to meet the ever-increasing needs of modern technology. It is a single-transistor Field Effect Transistor (FET) designed to perform high-performance functions in advanced applications such as power management, switching, and communications.

The NVMFS5C442NLWFAFT3G offers excellent performance and reliability, featuring advanced process technology that has been optimized for superior on-state current, superior drive capability and superior static and dynamic parameters. The design includes a high breakdown voltage (6.2V) and a wide operating frequency range (up to 200MHz), achieving an impressive combination of switch performance and current carrying capacity.

The NVMFS5C442NLWFAFT3G utilizes a TMOS configuration, which provides an inherently fast turn-on time and superior gate drive characteristics compared to conventional CMOS FETs. The device operates in the enhancement mode, in which the FET is off until an adequate voltage is applied to the gate. Once the gate voltage reaches a certain threshold (2.5V), the FET will begin to conduct current through the channel.

The NVMFS5C442NLWFAFT3G is designed to withstand harsh environmental conditions, such as temperature extremes and vibrations. It also features ESD protection and latch-up protection, making it suitable for a wide range of applications, such as automotive, industrial, and consumer electronics.

The excellent speed, ruggedness, and environmental protection of the NVMFS5C442NLWFAFT3G makes it an ideal choice for applications requiring a high-performance single FET for switching, power management, and communications. Its excellent features, including on-state current, drive capability, static and dynamic parameters, and a wide operating frequency range, make it one of the most advanced and reliable transistors available.

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