NVMFS5C442NT1G

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NVMFS5C442NT1G is a single N-Channel NexFET™ Power MOSFET which is available in a thermal-enhanced package, designed to minimize on-resistance. Due to its low on-resistance and low gate charge, it is ideal for high frequency rectification and switching applications. This MOSFET is constructed using insulated gate technology, which utilizes a vertically diffused N-channel MOSFET in combination with a low capacitance substrate. The NVMFS5C442NT1G is a dual-gate n-channel MOSFET that has great potential for high speed switching and rectification applications.

The NVMFS5C442NT1G is a N-Channel MOSFET which has a high-speed gate drive capability, low Rds(on), low gate charge, fast switching, and superior SOA due to excellent current handling capabilities. The device features provide superior reliability, ruggedness and stability. Because of its low on-resistance, this MOSFET is excellent for converting AC to DC, as well as switching applications. The device provides excellent Avalanche Ruggedness and can be used in automotive systems.

The NVMFS5C442NT1G has a low on-resistance with low gate charge and fast switching for fast rectification and switching applications. The thermal performance of the device is excellent and the Rds(on) is an industry leading 0.44 mΩ. The combination of high speed switching and low on-resistance in the NVMFS5C442NT1G make it a suitable choice for DC/DC converters, motor control, and automotive applications.

The NVMFS5C442NT1G utilises an insulated gate technology which uses an insulated gate transistor as the switching element. This technology has been improved to reduce the drain-source on-state resistance of the NVMFS5C442NT1G. The MOSFET features a low-capacitance substrate and a low gate charge, which makes the device ideal for high frequency switching applications.

The NVMFS5C442NT1G has several features which make it suitable for many applications. These include a low Rds(on) of 0.44 mΩ, a low gate charge, a fast switching time, and a thermal performance which is superior to other devices in its class. The combination of these features make the device suitable for switching and rectification applications, as well as DC/DC converters and motor control in automotive systems.

In conclusion, the NVMFS5C442NT1G is a single N-Channel NexFET™ Power MOSFET which is designed to provide excellent performance in high frequency switching and rectification applications. The device features a high speed gate drive capability, low Rds(on), low gate charge, fast switching, and superior SOA due to excellent current handling capabilities. It is suitable for DC/DC converters, motor control, and automotive systems, due to its combination of low on-resistance and fast switching.

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