NVMFS5C442NWFAFT3G Allicdata Electronics
Allicdata Part #:

NVMFS5C442NWFAFT3G-ND

Manufacturer Part#:

NVMFS5C442NWFAFT3G

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 29A 140A 5DFN
More Detail: N-Channel 40V 29A (Ta), 140A (Tc) 3.7W (Ta), 83W (...
DataSheet: NVMFS5C442NWFAFT3G datasheetNVMFS5C442NWFAFT3G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.30353
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NVMFS5C442NWFAFT3G is a single high-voltage FET transistor that has been specifically developed to meet the requirements of power conditioning and switching applications. This device is well-suited for use in high input impedance circuits, as well as in applications that require high current capacities, low on-state resistance, and low gate source capacitance.

The NVMFS5C442NWFAFT3G is a laterally diffused MOSFET (L-DMOSFET) with an N-channel structure, which means that a voltage applied to the gate determines whether the transistor is “on” or “off”. When the gate voltage is zero or negative, the transistor is “off” and the current flow through the channel is nearly zero, while when the gate voltage is high and positive, the transistor is “on” and the current flow through the channel is high. This makes the device ideal for use in power conditioning and switching applications.

The NVMFS5C442NWFAFT3G is also well-suited for use in circuits with high switching frequencies because it has low capacitance characteristics. This prevents switching from taking longer than desired, which can happen with other types of transistors. The device also has a high breakdown voltage of 500 V and is capable of handling currents of up to 5A, so it can be used in higher power applications.

The NVMFS5C442NWFAFT3G is easy to install and use in most circuits due to its small form factor and the fact that it does not require a heatsink to remain stable. The device also consumes very little power, which makes it ideal for battery powered applications as well. Additionally, the device is rated for a wide temperature range, which makes it suitable for both indoor and outdoor applications.

Overall, the NVMFS5C442NWFAFT3G is an excellent choice of transistor for applications that require high input impedance, high current capacity, low on-state resistance, and low gate source capacitance. The device is easy to install and use, can handle large currents, and is rated for a wide temperature range, making it an ideal choice for power conditioning, high frequency switching, and battery powered applications.

The specific data is subject to PDF, and the above content is for reference

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