Allicdata Part #: | NVMFS5C442NWFT1G-ND |
Manufacturer Part#: |
NVMFS5C442NWFT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V SO8FL |
More Detail: | N-Channel 40V 3.7W (Ta), 83W (Tc) Surface Mount 5... |
DataSheet: | NVMFS5C442NWFT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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NVMFS5C442NWFT1G, also known as a N-Channel MOSFET (Metal Oxide/Metal Semiconductor Field Effect Transistor), is a type of insulated-gate field-effect transistor (IGFET) made from silicon. The NVMFS5C442NWFT1G is a relatively low-cost MOSFET with a low gate-to-source voltage (Vgs) and a medium drain current (Id) providing a good balance between high input impedance and high output conductance. Because of this, it is commonly used in a variety of applications, such as power switching, motor control and audio amplifier output stages.
The NVMFS5C442NWFT1G is designed for low-power, low-voltage switching applications as it operates from only 4 volts. It also has a low gate input capacitance and low output capacitance, which is beneficial for high speed operations. It has a very low resistance when it is switched on, making it ideal for use in switch-mode power supplies (SMPS) where it is desired to quickly turn on and off. It also has a high voltage rating which makes it suitable for applications that require high voltage switching.
The NVMFS5C442NWFT1G has an input terminal (gate) and two output terminals (drain and source). When the gate voltage is at or above a certain threshold voltage, the transistor will turn on and allow current to flow from the source to the drain. If the gate voltage is below the threshold voltage, the transistor will shut off and there will be no current flow. This circuit represents the basic principles of a MOSFET, which allows for an efficient switch.
The NVMFS5C442NWFT1G is commonly used in motor control circuits as a switch to control motor speed and direction. It is used in audio amplifiers as an output stage to control the output power. It can also be used in switch-mode power supplies to reduce ripple and power dissipation. In addition, it can also be used in low-voltage power switching applications such as in digital logic circuits.
The NVMFS5C442NWFT1G is suitable for circuits that require high speed switching and high accuracy control. It is also very efficient since it does not require much gate current to turn it on or off. It is also very cost-effective, providing a great performance-to-cost ratio.
MOSFETs are becoming increasingly important in modern circuits as they are able to accurately control and switch high-voltage circuits with minimal power loss and they also offer improved efficiency compared to other semiconductor devices. The NVMFS5C442NWFT1G is one of the most popular MOSFETs on the market due to its high performance, low cost and wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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