| Allicdata Part #: | NVMFS5C450NLWFT1G-ND |
| Manufacturer Part#: |
NVMFS5C450NLWFT1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 40V 110A SO8FL |
| More Detail: | N-Channel 40V 3.7W (Ta), 68W (Tc) Surface Mount 5... |
| DataSheet: |  NVMFS5C450NLWFT1G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.7W (Ta), 68W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | -- |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tape & Reel (TR) |
Description
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NVMFS5C450NLWFT1G is a below-30V N-channel enhancement mode power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with gate to source voltage ranges of 1.8 to 5V. It is a monolithic device with a low profile surface mount package, which makes it highly suited for non-isolated set top box designs and other space-constrained power applications. The device has a low on-state resistance and operates at a junction temperature up to 175°C.NVMFS5C450NLWFT1G FETs are commonly used in low voltage power switching and voltage regulation circuits, as well as in many other applications where a low on-state resistance and/or fast switching speeds are required. Generally, FETs are used as semiconductor switches in a variety of circumstances, such as in the power supply networks of computers, audio amplifiers, data converters, and motor drives.The main working principle of the NVMFS5C450NLWFT1G is based on source and drain drift carriers (electrons and holes). By controlling the gate voltage, the number of available electrons and holes near the source and drain, and thus the drain current passing through the body, can be controlled. When reversed biased, the majority charge carriers (holes in the N-channel device and electrons in the P-channel device) from the bulk enter the channel creating an inversion layer allowing electrons to flow from drain to source. The basic principle of MOSFET operation is that it works as a voltage-controlled switch. This is due to the fact that the electric field between the gate and the source of the MOSFET is dependent on the gate-source voltage. This electric field can either repel or attract charge carriers between the source and the drain, allowing a desired control of the current flow through the device.As a result, NMFS5C450NLWFT1G FETs can be used as switches to quickly turn on and off power supply as well as to regulate voltage levels. Also, NVMFS5C450NLWFT1G FETs can be used in amplifier circuits as well as other circuits where current control is necessary. NVMFS5C450NLWFT1G FETs are particularly well-suited for low voltage applications due to their low gate capacitance, which makes them more suitable for higher frequency switching applications.In addition to the above applications, NVMFS5C450NLWFT1G FETs can also be used in converter circuits, where a constant voltage at varying current is required. Converters are used in many applications including battery chargers, electric power generation, speed control of motors and other similar devices. NVMFS5C450NLWFT1G FETs are well-suited for these applications due to their low on-state resistance, which helps minimize power loss in the switching operation.In conclusion, NVMFS5C450NLWFT1G FETs are low voltage N-Channel enhancement mode MOSFETs with low on-state resistance, which makes them suitable for many different applications. They are used mainly in voltage regulation, power switching, converter circuits, battery charging and other applications where fast switching speeds and/or low on-state resistance is desired.
The specific data is subject to PDF, and the above content is for reference
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