Allicdata Part #: | NVMFS5C450NWFAFT1G-ND |
Manufacturer Part#: |
NVMFS5C450NWFAFT1G |
Price: | $ 0.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 24A 102A 5DFN |
More Detail: | N-Channel 40V 24A (Ta), 102A (Tc) 3.6W (Ta), 68W (... |
DataSheet: | NVMFS5C450NWFAFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.29853 |
Vgs(th) (Max) @ Id: | 3.5V @ 65µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 68W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Ta), 102A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVMFS5C450NWFAFT1G is a NFET (n-type metal oxide semiconductor field effect transistor) belonging to the single transistor family. It\'s a high-voltage, high-frequency, and high-current transistor that is used to switch heavy loads up to 45-amps and is designed to work at frequencies up to 4GHz, making it ideal for wireless applications.
The NVMFS5C450NWFAFT1G is a floating channel type transistor that has a source and drain connected to each other through an insulated channel. This means that the source and drain are not directly connected to the gate, which creates an insulation layer between the two. This insulation layer prevents high frequency noise from affecting the transistor’s operation, allowing it to operate efficiently and reliably when used in high-frequency applications.
NVMFS5C450NWFAFT1G contains two metal plates on the drain and source. These two metal plates are known as metal-oxide-semiconductor (MOS). They are used to control the flow of electrons between the source and drain terminals. The voltage of the gate terminal controls the flow of electrons between the MOSFET’s source and drain. When the voltage of the gate is high, the electrons flow freely between the source and drain and the transistor is said to be in its “ON” state. When the voltage of the gate is low, the electrons cannot flow and the transistor is said to be in its “OFF” state.
In order to ensure that the transistor operates correctly, it needs to be connected in a certain way. The gate terminal needs to be connected to a voltage source, the source terminal needs to be connected to a load and the drain terminal needs to be connected to a grounded terminal. The transistor\'s operation can also be adjusted by changing the voltage of the gate. A higher gate voltage is used to turn the transistor ON and a lower gate voltage is used to turn the transistor OFF.
The NVMFS5C450NWFAFT1G is an ideal choice for applications such as Class AB audio amplifiers, high voltage switching, and RF power amplifiers. It is one of the best options when it comes to switching high current loads and its insulated channel prevents high frequency noise from affecting the transistor\'s operation. This makes the transistor ideal for use in high-frequency radio systems, such as cell phones and computer networks.
The specific data is subject to PDF, and the above content is for reference
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