Allicdata Part #: | NVMFS5C450NWFT1G-ND |
Manufacturer Part#: |
NVMFS5C450NWFT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V SO8FL |
More Detail: | N-Channel 40V 3.6W (Ta), 68W (Tc) Surface Mount 5... |
DataSheet: | NVMFS5C450NWFT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 65µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 68W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The NVMFS5C450NWFT1G is a type of field-effect transistor (FET) used in a variety of automotive, audio, industrial, and military applications. FETs are a type of transistor comprised of two main elements—a gate and a source/drain. They are used for controlling current flow in electronic circuits. The NVMFS5C450NWFT1G is a MOSFET, a subset of FETs that use a gate insulated from the substrate for its operation. It is a single-level MOSFET, meaning that it has a single channel.
The NVMFS5C450NWFT1G is primarily used in amplifiers and switching applications, where its ability to handle both high voltages and high current make it ideal. Its high pulse withstanding capability allows it to be used in high-frequency applications such as rectifiers and other power semiconductor applications. It is also used in analog circuits such as operational amplifiers and digital-to-analog converters. Its insulation can also be used to great effect in logic gates and other digital circuits.
The NVMFS5C450NWFT1G can be used in environments requiring temperatures ranging from -55 to +150°C, making it well suited for automotive, military, and other ruggedized applications. Additionally, its small size and low power consumption make it suitable for portable and mobile applications.
The working principle of the NVMFS5C450NWFT1G is based on the same principle as all other FETs. When an electric potential is applied to the gate, the capacitance between the gate and the substrate changes and the current between the source and drain is either increased or decreased—depending on the type of transistor. This change in current results in a change in voltage across the drain and source, allowing it to act as an amplifier or switch in the circuit.
The NVMFS5C450NWFT1G is an ideal choice for a variety of automotive, audio, industrial, and military applications. Its ability to handle high voltages and high current, its insulation, and its wide temperature range make it well suited for reliable performance and long-term usage. Additionally, its small size and low power consumption make it suitable for portable and mobile applications. With its wide range of applications, the NVMFS5C450NWFT1G is an incredibly versatile transistor.
The specific data is subject to PDF, and the above content is for reference
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