NVMFS5C456NLT1G

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.6W (Ta), 55W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1600pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3.7 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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Introduction

NVMFS5C456NLT1G is a single transistor MOSFET from NVMFS5C family. It is a 60V logic level N-Channel enhancement mode MOSFET. The features of NVMFS5C456NLT1G makes it highly suitable for applications related to power management/electronics. In this article, we will discuss about the applications and working principle of NVMFS5C456NLT1G.

Applications

NVMFS5C456NLT1G is a power MOSFET with a wide range of applications in the field of electronics. Some of the possible applications of this MOSFET are as follows: • Switching applications: NVMFS5C456NLT1G is widely used as a switch as it has a very low on-state resistance. This makes it possible to use it in applications such as motor drives, induction heating, motor control, home appliances, robots and the like.• Over current protection: NVMFS5C456NLT1G can be used to protect electronic devices from over current. It can be used in applications where it is necessary to limit the current supplied to a certain device.• Heating control: NVMFS5C456NLT1G can be used for temperature control and variable speed fans.• High voltage switching: NVMFS5C456NLT1G has a breakdown voltage of 60V, making it suitable for high voltage switching applications. • Smart Lighting: It can be used to create smart lighting solutions such as smart dimming, energy efficiency and personalization.• Automotive applications: NVMFS5C456NLT1G is suitable for automotive systems such as fuel injection, power door lockers and seat adjustment.

Working Principle

NVMFS5C456NLT1G is an enhancement mode MOSFET. This means that it is turned ON when it is provided with a voltage greater than its threshold voltage. When the Gate is provided with a voltage greater than its threshold voltage, it forms an inversion layer which allows current to flow between the Source and Drain. The typical threshold voltage of NVMFS5C456NLT1G is 4V. This means that if the voltage provided to the gate exceeds 4V, the MOSFET will turn ON and current will flow between the source and the drain. The voltage at which the MOSFET turns OFF is known as the Cut-off voltage. The gate voltage must be reduced below the cut-off voltage for the MOSFET to turn OFF and stop the flow of current. The typical Cut-off voltage of NVMFS5C456NLT1G is 2V. NVMFS5C456NLT1G has a maximum drain-source Voltage (VDSS) of 60V. This means that it can withstand a maximum voltage of 60V between the source and the drain.

Conclusion

NVMFS5C456NLT1G is a single transistor MOSFET from NVMFS5C family. It is an enhancement mode MOSFET with a wide variety of applications such as switching, over current protection, heating control, high voltage switching, smart lighting and automotive applications. It has a low threshold voltage of 4V and a cut-off voltage of 2V. It also has a maximum drain-source voltage of 60V.

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