Allicdata Part #: | NVMFS5C456NLWFT1G-ND |
Manufacturer Part#: |
NVMFS5C456NLWFT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V SO8FL |
More Detail: | N-Channel 40V 3.6W (Ta), 55W (Tc) Surface Mount 5... |
DataSheet: | NVMFS5C456NLWFT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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NVMFS5C456NLWFT1G is a single field effect transistor (FET) that can be used for many different applications and circuits. This FET is a has a maximum drain current of 5A and drain-source voltage of 400V, making it suitable for power switching applications. This FET also features an internal diode, making it suitable for full-wave rectification and protection circuits. This FET can be used in a wide variety of applications, such as power supplies, motor control, H-bridge circuits, boost converters and more.
The working principle of a FET is based on the idea that a voltage applied to the gate terminal of the device will cause a channel to form in the semiconductor material between the source and drain terminals. This channel acts as a resistor, allowing current to flow from the source to the drain when a voltage is applied. As the gate voltage increases, the resistance of the channel decreases, causing an increase in the current flowing from the source to the drain.
The NVMFS5C456NLWFT1G is a single FET with an on-state resistance of 1.2 ohms. This device can be used in many different applications, such as those requiring high switching speed and high current capacity. It is also suitable for use in high-frequency applications, as it has a high frequency operation due to its fast rising and falling times. This device can also be used in power supplies to switch high current levels with ease.
The NVMFS5C456NLWFT1G is also suitable for use in H-bridge circuits. An H-bridge circuit is used to drive motors and to invert their direction of rotation. This is achieved by applying complementary voltages across the terminals of the H-bridge circuit. When the voltage applied to the FET is increased, the current flowing through the FET is increased, thereby allowing the motor to be driven in the desired direction.
This FET can also be used in boost converter circuits. A boost converter is an electronic circuit that increases the voltage of a DC input to a higher DC level. It is used mostly in applications requiring higher voltage levels, such as those in power supplies. This FET can be used to switch the current in the boost converter circuit, allowing the output voltage to be increased.
The NVMFS5C456NLWFT1G is a single FET device with many versatile applications. It is suitable for use in many different applications, such as power supplies, motor control and protection circuits. Its high current capacity and high frequency operation makes it suitable for use in high-frequency applications as well. This device can also be used in H-bridge circuits and boost converter circuits.
The specific data is subject to PDF, and the above content is for reference
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