Allicdata Part #: | NVMFS5C456NLWFT3G-ND |
Manufacturer Part#: |
NVMFS5C456NLWFT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V SO8FL |
More Detail: | N-Channel 40V 3.6W (Ta), 55W (Tc) Surface Mount 5... |
DataSheet: | NVMFS5C456NLWFT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
Description
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NVMFS5C456NLWFT3G is a single channel, low gate charge n-channel enhancement mode Power Field Effect Transistor (FET), intended for use in power management circuits. It is specifically designed for synchronous buck voltage regulation, DC-DC converter and other related applications. The device is provided in a 3mmx3mm DFN-6 package and is pin compatible with the majority of existing FETs. The NVMFS5C456NLWFT3G has an integrated driver that regulates the gate voltage outswing voltage to 24V and offer a high side gate drive for driving a power MOSFET. This FET has low gate input and output capacitance and a large number of gates so it can handle a wide range of power.In terms of its working principle, the NVMFS5C456NLWFT3G functions by having the drain connected to the source, where a voltage applied to the gate controls the flow of current through the channel. This is known as the MOSFET effect, which occurs when a positive electric field is created along the channel, allowing electrons to flow through it. This electric field is created by the voltage applied to the gate, therefore the greater the voltage, the stronger the electric field and the larger the current that can flow through the channel.In terms of application fields, the NVMFS5C456NLWFT3G can be used in power management circuits such as synchronous buck voltage regulators, DC-DC converters and many other related applications. It performs these tasks by providing a high switching speed, low resistance channel, efficient power management and a high voltage output swing. With its low on-state resistance, it is able to reduce switching losses, conserving power and increasing efficiency. Additionally, it has a low gate charge which extends the period of time it has to hold the voltage across the gate terminal. This enables the FET to switch faster, thus increasing the switching speed and efficiency.The NVMFS5C456NLWFT3G is designed to offer low gate charge and high drain current rating of 10A and maximum current of 100A. It is also capable of withstanding 35V drain-to-source voltage with a maximum drain-to-source on-resistance of 49mΩ at 10V gate drive. It is also designed to have low output capacitance, which helps increase the switching speed. With its high speed switching performance, it can be used for low power regulated supplies, controllers and converters. In conclusion, the NVMFS5C456NLWFT3G is a single channel, low gate charge n-channel enhancement mode FET, designed for more efficient power management circuits such as synchronous buck voltage regulators, DC-DC converters and many other related applications. It provides high switching speed, low resistance channel, efficient power management and a high voltage output swing. Additionally, it has a low gate charge and a low output capacitance which helps increase the switching speed. Furthermore, it has a high current rating and is capable of withstanding high voltage drain-to-source voltage.The specific data is subject to PDF, and the above content is for reference
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