Allicdata Part #: | NVMFS5C456NWFT1G-ND |
Manufacturer Part#: |
NVMFS5C456NWFT1G |
Price: | $ 0.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | 40V 4.5 MOHM T6 S08FL SIN |
More Detail: | N-Channel 40V 20A (Ta), 80A (Tc) 3.6W (Ta), 55W (T... |
DataSheet: | NVMFS5C456NWFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.27473 |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 25V |
Vgs (Max): | ±20V |
Series: | Automotive, AEC-Q101 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta), 80A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The NVMFS5C456NWFT1G from ON Semiconductor is a N-Channel Enhancement Mode Field Effect Transistor specifically designed for high frequency switching and amplifier applications. This transistor offers a low static drain-source resistance (RDS on ) and a low gate threshold voltage (VGS th) which enables it to be used in power amplifiers and DC/DC converters. The NVMFS5C456NWFT1G also features very low input and output capacitance values, which make it suitable for high speed applications. In addition, it has a wide range of operating frequencies up to 2.2GHz.
The NVMFS5C456NWFT1G is a depletion-mode MOSFET consisting of a source, drain and gate terminals. The device can be operated in either enhancement or depletion mode depending on the potential difference between the gate and source terminals, where an increase in voltage causes the device to turn on. When operating in enhancement mode, the drain and source current will flow only when the gate voltage is greater than the threshold voltage, and the larger the gate voltage, the higher the current. In depletion mode, the drain and source current will flow regardless of the gate voltage, and the current is controlled by the gate voltage.
The NVMFS5C456NWFT1G is ideal for use in high frequency, power amplifier, and DC/DC converter applications. Its low RDS on and VGS th values, coupled with its low input and output capacitance values, enable it to be used in applications that require high switching speeds and high power transfer. Additionally, its wide frequency range of 2.2GHz allows it to be used in a variety of RF applications.
In conclusion, the NVMFS5C456NWFT1G is an ideal choice for high frequency, power amplifier and DC/DC converter applications. Its low RDS on and VGS th values, coupled with its wide frequency range, make it a useful device in many different applications. In addition, its low input and output capacitance values enable it to be used in applications that require high speed switching and high power transfer.
The specific data is subject to PDF, and the above content is for reference
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