Allicdata Part #: | NVMFS5C460NLWFT1G-ND |
Manufacturer Part#: |
NVMFS5C460NLWFT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V SO8FL |
More Detail: | N-Channel 40V 3.6W (Ta), 50W (Tc) Surface Mount 5... |
DataSheet: | NVMFS5C460NLWFT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The NVMFS5C460NLWFT1G is a type of insulated gate field effect transistor (IGFET), more specifically a metal oxide semiconductor field effect transistor (MOSFET), and designed in the single configuration. Invented in the 1960s, it was the first practical insulated gate field effect transistor (IGFET) and allowed the electric industry to develop smaller, more advanced semiconductor technology in a wide variety of applications.
The NVMFS5C460NLWFT1G is manufactured using a process called V-shape which produces high-performance, advanced junction field-effect transistors (JFETs) using wafer shaping and layering. This process includes isolation layers and gate isolation layers to ensure a fast switching speed and low power consumption. The NVMFS5C460NLWFT1G has a low threshold voltage as well as a low on-resistance.
The NVMFS5C460NLWFT1G is an ideal solution for applications that require high switching speed, low power consumption and a low threshold voltage. The NVMFS5C460NLWFT1G is used in a wide range of consumer electronics, such as televisions, gaming systems, and personal computers. It is also used in industrial applications, such as industrial control systems, power electronics, and power supplies.
The NVMFS5C460NLWFT1G works by applying a voltage to its gate which controls the flow of electrons through the channel. This is achieved by the interaction of the electric field between the gate and the surface of the channel. By applying positive voltage to the gate, the channel beneath opens up and allows electrons to flow freely. Conversely, when negative voltage is applied to the gate, the channel is closed and no electron flow takes place.
The NVMFS5C460NLWFT1G also features a temperature coefficient that helps to maintain the performance of the device at high temperatures. It also has improved Gate Leakage Currents, which further reduces its power consumption. Overall, the NVMFS5C460NLWFT1G is an ideal choice for applications that require high switching speeds, low power consumption, and low threshold voltage.
The specific data is subject to PDF, and the above content is for reference
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