Allicdata Part #: | NVMFS5C460NLWFT3G-ND |
Manufacturer Part#: |
NVMFS5C460NLWFT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V SO8FL |
More Detail: | N-Channel 40V 3.6W (Ta), 50W (Tc) Surface Mount 5... |
DataSheet: | NVMFS5C460NLWFT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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NVMFS5C460NLWFT3G is a single N-channel MOSFET (CMOS) transistor from the FS Series manufactured by Fairchild Semiconductor. It has been designed for use in a variety of demanding applications and works on the principle of a voltage-controlled field effect.
NVMFS5C460NLWFT3G features a drain drain-source voltage of 20V and a maximum drain current of 120mA. The gate threshold voltage is at 1.9V and the maximum channel resistance is at 18 Ohms. This makes it suitable for both high and low current applications, while its small package size makes it suited for use in compact device designs.
The most popular applications for NVMFS5C460NLWFT3G include mobile device circuit boards, power supply switching regulators and among miniature display systems. It is also commonly used in miniaturized devices such as remote controls, keyless entry systems, and automotive applications. This device is also beneficial for low noise power switching and high current pulse applications.
The internal structure of the NVMFS5C460NLWFT3G is made up of a single metal-oxide gate structure and a gate insulator layer. This means that when a voltage is applied to the metal gate, an electric field is created between the metal gate and the underlying substrate which in turn generates an electric charge. This electric charge then modulates the magnitude of the applied voltage, controlling the operation of the device.
The main advantage of this device over traditional bipolar transistors is its very low voltage drive requirements. This makes it ideal for low power, low voltage applications like those found in portable electronics. Furthermore, the higher transconductance of this device enables it to perform at higher currents levels than a traditional bipolar transistor.
Due to its low voltage and current requirements as well as its ability to operate at higher currents, NVMFS5C460NLWFT3G is an ideal choice for a number of demanding applications. Its small footprint and low voltage operation makes it highly suitable for use in portable electronics and it is also beneficial in low noise power switch applications. As such, it is a very popular choice among device designers and manufacturers.
The specific data is subject to PDF, and the above content is for reference
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