Allicdata Part #: | NVMFS5C468NLAFT3G-ND |
Manufacturer Part#: |
NVMFS5C468NLAFT3G |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 37A SO8FL |
More Detail: | N-Channel 40V 13A (Ta), 37A (Tc) 3.5W (Ta), 28W (T... |
DataSheet: | NVMFS5C468NLAFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.13625 |
Gate Charge (Qg) (Max) @ Vgs: | 7.3nC @ 10V |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 25V |
Vgs (Max): | ±20V |
Series: | Automotive, AEC-Q101 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Rds On (Max) @ Id, Vgs: | 10.3 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta), 37A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The NVMFS5C468NLAFT3G is a single Enhancement Mode Field-Effect Transistor (FET). This FET is designed with a vertical, octagonal shape and has an ultra-small package of 0.5mm x 0.5mm. As a vertical FET, it has minimal parasitic capacitance, enabling it to have an improved switching performance and higher frequency response. Additionally, its ultra-small size allows it to reduce board space and system costs.
Applications
The NVMFS5C468NLAFT3G is often used in high-frequency and high-temperature applications. These include RF amplifiers, motor control systems, and high-speed switching circuits. It is also suitable for ultra-wideband amplifier applications as well as integrated circuit testing. Its high thermal stability and small size make it beneficial for implementing high-density circuits. Additionally, the NVMFS5C468NLAFT3G can also be used in DC-DC converters, as well as for signal transmitters.
Working Principle
The NVMFS5C468NLAFT3G is based on an enhancement-mode FET. This FET is designed with two p-type semiconductor gates and one n-type semiconductor channel. When a small positive voltage is applied to the gate, positive charge carriers called “holes” are attracted to the channel. This creates a conductive channel between the source and drain, allowing current to flow in the circuit. On the other hand, when the gate voltage is set to zero voltage, the channel is deactivated, stopping the current flow in the circuit.
This FET also operates with a very low current, which makes it suitable for power saving applications. It has a low thermal resistance which makes it ideal for high-speed and high-power applications. Moreover, it has a good breakdown voltage and drain saturation current, making it suitable for high-power and high-temperature applications.
Conclusion
Overall, the NVMFS5C468NLAFT3G is an ideal choice for a variety of high-frequency, high temperature, and high power applications. It is also beneficial for ultra-wideband amplifier applications as well as integrated circuit testing. Additionally, it has low thermal resistance and small size, which makes it suitable for implementing high-density circuits. Consequently, it is an important component in applications that require high performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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