NVMFS5C468NLT1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NVMFS5C468NLT1G application field and working principle

NVMFS5C468NLT1G is a silicon N-Channel 3.3V logic-level Low-RDS (ON) enhancement mode Field Effect Transistor (FET). It is a single 80V VDS, 20V VGS device targeted for load switch, lockout and rarely for low voltage applications. Its low gate driving power and low gate-charge results in minimum power consumption. This FET has a high-density cell design, ultra-low gate charge, and low on-resistance RDS (ON).

Application Field

NVMFS5C468NLT1G can be effectively used for load switch, lockout and rarely for low voltage applications in modern circuits. Its low gate charging power and low on-resistance make it operate at low power consumption. This FET makes possible wide range of different applications in various modern circuits, from automotive systems to consumer electronics, such as smartphones and tablets, digital cameras, and portable music and video players.

Working Principle

The basic operating principle of NVMFS5C468NLT1G is based on the current that flows through the device when the gate-source voltage (VGS) is applied. VGS is responsible for creating and controlling a region of free electrons between the source and drain called the “channel”. When the VGS is positive and applied above a certain threshold voltage, it creates a depletion region between the source and drain. This blocks any additional current from passing between these two regions.

In the case of a N-type metal-oxide transistor, the source is connected to ground, the drain is connected to a voltage level and the gate is connected to the VGS. When the VGS is low enough, electrons are able to move from the source to the drain and from drain to the source. This flow of electrons creates a current between source and drain, and it is controlled by the VGS.

In the case of the NVMFS5C468NLT1G, the device has a low RDS (ON), which means that an even lower VGS is required to turn the device on, allowing higher levels of current to flow between source and drain. This is an important feature since it allows the device to be used with low-voltage applications. In addition, since the gate-charging power is low, the power dissipated by the device is also low making it ideal for applications that are power-sensitive.

Conclusion

Overall, the NVMFS5C468NLT1G is a silicon N-Channel 3.3V logic-level Low-RDS (ON) enhancement mode Field Effect Transistor targeted for load switch, lockout and rarely for low voltage applications. It has a high-density cell design, ultra-low gate charge, and low on-resistance RDS (ON). Its low gate charging power and low on-resistance makes it operate at low power consumption. This FET can be effectively used in various modern circuits found in automotive systems to consumer electronics.

The specific data is subject to PDF, and the above content is for reference