NVMFS5C468NLWFT3G

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.5W (Ta), 28W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	570pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	7.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	10.3 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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The NVMFS5C468NLWFT3G is a high voltage, single N-channel MOSFET designed to reduce power losses and increase power efficiency. This particular MOSFET was designed to minimize conduction losses and reduce switching losses. It is also capable of providing multiple levels of voltage clamping which further helps to reduce switching losses. Additionally, it is capable of withstanding higher dv/dt and di/dt rise times which increases the reliability and longevity of the part.The NVMFS5C468NLWFT3G is a high voltage MOSFET signaling device specifically designed to reduce power consumption in electronic circuitry. It is extremely efficient at regulating voltage and current levels; therefore, allowing it to reduce the power dissipation of the entire circuit.The NVMFS5C468NLWFT3G is a smaller, more efficient version of the standard Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) which allows for more efficient power communication and regulation in boards and components. It features a high breakdown voltage, low gate threshold voltage and very low overall on-resistance. This results in a much more efficient power efficiency compared to older MOSFETs, allowing for less power losses.The working principle of the NVMFS5C468NLWFT3G is based on the principle of electrostatic attraction or repulsion. Positive voltage on the gate of the device results in the formation of an electrostatic field which alters the shape of the electric field of electrons in the channel between the source and the drain of the device. This allows for current flow to be regulated and prevented from entering or leaving the surface of the device. This regulation of current is essential for any power regulation circuit.In addition to power efficiency, the NVMFS5C468NLWFT3G is a great choice for applications where smaller dimensions and lighter weight is required. Its small size also allows for greater integration in a circuit, as well as increased compatibility with other components. It is also able to withstand high temperature environments, making it a great choice for applications such as LED lighting and power supplies.The NVMFS5C468NLWFT3G is an ideal choice for a variety of applications, such as those requiring power regulation, power switching, lighting, high voltage clamping and high temperature operations. It is also suitable for industrial control and automation, power conversion and management, and consumer electronics. With its small size, increased efficiency and reliability, the NVMFS5C468NLWFT3G is a great choice for any application that needs high voltage signaling and power communication.

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