NVMFS5C628NLT1G

NVMFS5C628NLT1G is a Single, Enhancement Mode, Non Volatile Memory Field Effect Transistor (FET) from Toshiba Electronics Europe. This particular type of transistor is used as a switch in digital circuits. It helps to reduce power consumption, prevent current leakage, and has high switching speed.

The NVMFS5C628NLT1G provides a low on-resistance that allows for high speed switching and is designed to meet the IEC60601-2-1 and IEC60601-2-2 test requirements.

The general application field of the NVMFS5C628NLT1G is to provide a low-voltage, low-power, low-current mode switch between supply voltage and ground. It is useful for switching loads such as resistors, capacitors, and inductors. It is typically used in consumer electronics including mobile phones, laptops, and gaming consoles.

Enhancement-mode MOSFETs are the most widely used type of FETs and are used in majority of digital circuits. Enhancement-mode MOSFETs are characterized by a low required gate voltage. This particular transistor utilizes a depletion-mode FET structure that can be made to eliminate any leakage current and provide low off-state capacitance, making it ideal for low-power, high-speed switching.

NVMFS5C628NLT1G is also a non-volatile memory FET, which means that it can store information even when there is no power applied. This allows the device to keep track of a given state even after power is removed. Non-volatile memory FETs are widely used in mobile applications to keep track of system configuration settings in the background.

The working principle of NVMFS5C628NLT1G is relatively simple. It is built with a P-type substrate, a source (S) on the left and a drain (D) on the right, as illustrated below in Figure 1.

The gate of the device is connected to a non-volatile memory storage cell that stores a binary bit of data. When a voltage is applied to the gate, it creates an electric field in the substrate. If the voltage is sufficient, it allows the electrons to flow from the source to the drain and vice versa, effectively turning on the switch and allowing current to flow through.

The gate voltage of the NVMFS5C628NLT1G is tightly controlled via several levels of circuitry within the device. This ensures that the transistor will remain in its desired state even when the power to the device is cycled. This allows the transistor to maintain its current information without the need to constantly remember or re-store the data.

In summary, the NVMFS5C628NLT1G is a Single, Enhancement Mode, Non Volatile Memory Field Effect Transistor that is suitable for low voltage, low power, and high speed switching applications. It is widely used in consumer electronics such as mobile phones, laptops, and gaming consoles. Furthermore, its non-volatile memory feature allows it to keep track of the current state of the device even after power has been removed.