NVMFS5C628NLWFT3G

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NVMFS5C628NLWFT3G is a high-performing trench gate MOSFET device and is a member of the N-Channel Logic Family. This component is designed to offer low on-resistance, fast switching speeds and high transconductance. It is suitable for a wide range of applications, such as high efficiency DC/DC converters, and high current switching applications.

The NVMFS5C628NLWFT3G device is designed with integrated ESD protection, resulting in improved robustness when used in harsh environments. It features an integrated intrinsic body diode, flat band voltage and low Qg total. The combination of these features allow for an added degree of design flexibility.

Applications

The NVMFS5C628NLWFT3G MOSFET is capable of handling up to 85 Amps continuous drain current and up to 6 V drain-source voltage. It is typically used as a synchronous rectifier in switching energy and power supplies, such as telecoms, automotive and industrial, as well as for power management and high-side switching applications.

Working Principle

NVMFS5C628NLWFT3G MOSFET is an NMOS transistor with three terminals; a gate, a source and a drain. The gate terminal is used to control the current flowing through the source and drain terminals. When the gate is biased at the correct potential, generated by the power supply, a channel is formed through which current can flow. By controlling the voltage on the gate terminal, it is possible to control the amount of current flowing through the transistor.

MOSFETs are normally in an “off” state where the channel is blocked and no current can flow. When a fixed voltage is applied to the gate terminal, a positive charge buildup is created at the oxide-semiconductor interface, forming a conducting channel between the source and drain terminal of the MOSFET. This reverse-biased Gate-Source junction generates a depletion region in the semiconductor, which prevents further current flow between the source and drain terminal.

The voltage range for the NVMFS5C628NLWFT3G MOSFET is from -10V (VGS) to +60V (cellulars) with 8V (VGS) at the gate controlling a maximum drain current of 85A. That makes it an ideal device for applications such as high efficiency DC/DC converters, high current switching, automotive, power management and high-side switching.

NVMFS5C628NLWFT3G is a high quality MOSFET device that offers a wide range of features and benefits. It is designed to offer low on-resistance and fast switching speeds. The device is also equipped with integrated ESD protection, making it suitable for applications in harsh environments. The device has very low Qg total, resulting in less power dissipation and better performance. Finally, it has a flat band voltage and the combination of the above-mentioned features allow for an added degree of design flexibility.

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