NVMFS5C645NLWFAFT1G

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The NVMFS5C645NLWFAFT1G is a single P-Channel Trench MOSFET with a maximum drain-source voltage of 20V and a two-cell, one-gate capacitorless embedded Flash memory cell. The features, working principle and application fields of this microelectronic device are discussed in this article.

Features:

The NVMFS5C645NLWFAFT1G is an enhancement mode, single gate P-Channel MOSFET, featuring low on-state resistance and fast switching capabilities. It has good ESD protection and superior gate charge protection, resulting in high reliability and robustness. This device is suitable for high-frequency, high-volume, cost sensitive applications.

The device offers a small footprint and an integrated two-cell, one-gate Flash memory cell which enables single chip memory and logic integration. It also offers high current carrying capacity with a drain current of 30A and wide voltage range with a maximum drain-source voltage of 20V.

Working Principle:

The NVMFS5C645NLWFAFT1G is a P-Channel MOSFET based on the basic working principle of FETs. The operating principle of MOSFETs is based on the control of charge carriers either electrons (N-Channel) or holes (P-Channel). The operation of the device is based on the modulation of the channel current due to the application of an electric field produced by the gate. The transistor is turned on and off by controlling the voltage in the gate terminal. When the applied gate voltage increases, the channel region between the drain and the source increases and the device is said to be in the “on” state or in its saturated state.

Application Field:

The NVMFS5C645NLWFAFT1G is widely used in automotive applications such as vehicle control, power management and in mobile information and communication systems. As it is a compact and cost effective device it is also used in low power portable electronics systems like digital cameras, PDAs and smart phones. It can also be used in various industrial applications such as power management, motor control and in various switch mode power supplies.

The NVMFS5C645NLWFAFT1G is also used in high speed logic designs which require a combination of logic and non-volatile memory. As the device is integrated with a single gate Flash memory cell, it can be used in AC/DC converter designs, power over Ethernet designs, automotive navigation systems and various other applications which require a compact and cost effective memory solution.

The NVMFS5C645NLWFAFT1G is an ideal solution for low power, cost sensitive applications where small form factor and reliable memory solutions are required.

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