NVMFS5C646NLWFAFT3G

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The NVMFS5C646NLWFAFT3G is a high-density logic N-channel MOSFET. It is designed to combine high-density logic switching, an ESD protection circuit, and a fast switching current in a single package. NVMFS5C646NLWFAFT3G transistors are perfect for high power applications where speed, density and performance matter.

Device Characteristics

The NVMFS5C646NLWFAFT3G is a high-current, low RDSON logic N-channel MOSFET. It is designed to have an extremely high on-resistance (RDSON), very low gate-source threshold voltage (VGS), and very low threshold voltage variation over temperature. The device is encapsulated and is mounted in standard SO-8 packages.

The NVMFS5C646NLWFAFT3G has a single source connection and a single drain connection. The device is designed to provide a low on-state voltage drop (VDS). It also offers a very high energy efficiency and a fast switching time. The device has an extended temperature range of -55 to 150°C, making it suitable for a wide range of high power applications.

Applications

The NVMFS5C646NLWFAFT3G is well-suited for use in various high-power, high-speed applications. This includes power supply circuits, computer power management, sensors, actuators, motor control, high-speed switching, and communication systems. It is also a suitable choice for voltage and current sensing, power distribution, and temperature control. The transistor is a preferred choice when device density or power requirements are high.

Working Principle

The NVMFS5C646NLWFAFT3G is an N-channel MOSFET, which means it operates via the movement of electrons. As a gate voltage is applied to the device, it causes a potential difference in the junction between the source and drain, creating an electric field. This electric field then causes electrons to move to the drain, and the current can flow. This principle, known as depletion mode, is the basic operation of the NVMFS5C646NLWFAFT3G.

The NVMFS5C646NLWFAFT3G also features a built-in ESD protection circuit, which helps protect the device from Electrostatic Discharge (ESD). The circuit is designed to absorb any ESD that may be present, helping to protect the transistor. The ESD protection circuit also helps to reduce switching bounce, resulting in a smoother and more reliable current flow.

Conclusion

The NVMFS5C646NLWFAFT3G is a high-current, low RDSON logic N-channel MOSFET. It is designed to provide high power and fast switching in applications where device density and performance are critical. The device is designed to combine high-density logic switching, an ESD protection circuit, and a fast switching current in a single package. It is well-suited for use in a variety of high-power, high-speed applications and is an ideal choice for voltage and current sensing, power distribution, temperature control, and other applications where device density and power requirements are high.

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